NTE NTE3103 Datasheet

NTE3103

Photon Coupled Interrupter Module

NPN Darlington

Description:

The NTE3103 Interrupter Module is a gallium arsenide infrared emitting diode coupled to a silicon
Darlington connected phototransistor in a plastic housing. The packaging system is designed to opti­mize the mechanical resolution, coupling efficiency, ambient light rejection, cost, and reliability. The
gap in the housing provides a means of interrupting the signal with an opaque material, switching the
output from an “ON” into an “OFF” state.

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Total Device

Operating Temperature Range, T
Storage Temperature Range, T

J

stg

Lead Temperature (During Soldering, 5sec Max), T

Infrared Emitting Diode

Forward Current, I

F

Continuous 60mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak (Pulse Width ≤ 1µs, PRR ≤ 300pps) 3A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Reverse Voltage, V
Power Dissipation, P

R

E

Derate Above 25°C 1.33mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Darlington Connected Phototransistor

Power Dissipation, P

D

Derate Above 25°C 2.0mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Continuous Collector Current, I
Collector–Emitter Voltage, V
Emitter–Collector Voltage, V

C
CEO
ECO

L

–55° to +100°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +100°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+260°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

100mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

150mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

100mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

55V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

7V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics: (TA = +25°C, Note 1 unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Emitter

Reverse Breakdown Voltage V
Forward Voltage V
Reverse Current I
Capacitance C

(BR)RIR

F

R

i

= 10µA 6 – – V
IF = 60mA – – 1.7 V
VR = 5V – – 100 nA
V = 0, f = 1MHz – 30 – pF

Note 1. Stray irradiation can alter values of characteristics. Adequate shielding should be provided.

Electrical Characteristics (Cont’d): (TA = +25°C, Note 1 unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Detector

Collector–Emitter Breakdown Voltage V
Emitter–Collector Breakdown Voltage V

(BR)CEOIC
(BR)ECOIE

Collector Dark Current I
Capacitance C

CEO

ce

= 1mA 55 – – V

= 100µA 7 – – V
VCE = 45V – – 100 nA
VCE = 5V, f = 1MHz – 5 8 pF

Coupled

Photodiode Current I

CE(on)

VCE = 1.5V, IF = 2mA 0.5 – – mA
VCE = 1.5V, IF = 5mA 2.5 – – mA
VCE = 1.5V, IF = 10mA 7.5 – – mA

Collector–Emitter Saturation Voltage V
Turn–On Time t
Turn–Off Time t

CE(sat)IC

on
off

= 1.8mA, IF = 10mA – – 1.0 V

VCC = 5V, IF = 10mA, RL = 750Ω – 45 – µs

– 250 – µs

Note 1. Stray irradiation can alter values of characteristics. Adequate shielding should be provided.

.124 (3.15

.433 (11.0)

Max

.315 (8.0) Min

+

D

D – Detector
E – Emitter

E

+

.246 (6.25)

.136 (3.54) Min
Sensing Area

.303 (7.69)

Min

Seating
Plane

.110 (2.79) Max.295 (7.49) Max