NTE NTE3101 Datasheet

NTE3101

Photon Coupled Interrupter Module

NPN Darlington Output

Description:

The NTE3101 Interrupter Module is a gallium arsenide infrared emitting diode coupled to a silicon
Darlington connected phototransistor in a plastic housing. The package system is designed to opti­mize the mechanical resolution, coupling efficiency, ambient light rejection, cost, and reliability. The
gap in the housing provides a means of interrupting the signal with an opaque material, switching the
output from “ON” into an “OFF” state.

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Infrared Emitting Diode

Power Dissipation, P

E

Derate Above 25°C 1.33mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Forward Current, I

F

Continuos 60mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak (Pulse Width ≤ 1µs, PRR ≤ 300pps) 3A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Reverse Voltage, V

R

Phototransistor

Power Dissipation, P

D

Derate Above 25°C 2.0mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Continuous Collector Current, I
Collector–Emitter Voltage, V
Emitter–Collector Voltage, V

C
CEO
ECO

Total Device

Operating Junction Temperature Range, T
Storage Temperature Range, T

stg

J

Lead Temperature (During Soldering, 5sec max), T

–55° to +100°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +100°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

L

100mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

150mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

100mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

55V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+260°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics: (TA = +25°C, Note 1 unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Emitter Characteristics

Reverse Breakdown Voltage V
Forward Voltage V
Reverse Current I
Capacitance C

(BR)R

F

R

IR = 10µA 6 – – V
IF = 60mA – – 1.7 V
VR = 5V – – 100 nA
V = 0, f = 1MHz – 30 – pF

i

Note 1. Stray irradiation can alter values of characteristics. Adequate shielding should be provided.

Electrical Characteristics (Cont’d): (TA = +25°C, Note 1 unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Detector Characteristics

Collector–Emitter Breakdown Voltage V
Emitter–Collector Breakdown Voltage V
Collector Dark Current I

(BR)CEOIC
(BR)ECOIE

CEO

Capacitance C

ce

= 1mA 55 – – V

= 100µA 6 – – V
VCE = 45V – – 100 nA
VCE = 5V, f = 1MHz – 3.3 5.0 pF

Coupled Characteristics

Collector ON Current I

CE(on)

VCE = 5V, IF = 5mA 0.15 – – mA
VCE = 5V, IF = 20mA 1.0 – – mA
VCE = 5V, IF = 30mA 1.9 – – mA

Collector–Emitter Saturation Voltage V
Turn–On Time t
Turn–Off Time t

Note 1. Stray irradiation can alter values of characteristics. Adequate shielding should be provided.

1

CE(sat)IC

on
off

= 1.8mA, IF = 30mA – – 0.4 V

VCC = 5V, IF = 30mA,
RL = 2.5kΩ

– 8 – µs
– 50 – µs

.972 (24.69)
.750 (19.05)

D – Detector

+

E

D

+

E – Emitter

.129 (3.28) Max

.246 (6.25)
.136 (3.45) Min
Sensing Area

.122

.433 (11.0)

(3.1)

Max

.315

Seating

(8.0)

Plane

.295 (7.49) Max .110 (2.79) Max