NTE NTE3100 Datasheet
NTE3100
Photon Coupled Interrupter Module
Description:
The NTE3100 Interrupter Module is a gallium arsenide infrared emitting diode coupled to a silicon
phototransistor on a plastic housing. The package system is designed to optimize the mechanical
resolution, coupling efficiency, ambient light rejection, cost, and reliability. The gap in the housing provides a means of interrupting the signal with an opaque material, switching the output from an “ON”
into an “OFF” state.
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Total Device
Operating Temperature Range, T
Storage Temperature Range, T
J
stg
Lead Temperature (During Soldering, 5sec max), T
Infrared Emitting Diode
Power Dissipation, P
E
Derate Above 25°C 1.33mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Current, I
F
Continuous 60mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Pulse Width ≤ 1µs, PRR ≤ 300pps) 3A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Reverse Voltage, V
R
Phototransistor
Power Dissipation, P
D
Derate Above 25°C 2.0mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Collector Current, I
Collector–Emitter Voltage, V
Emitter–Collector Voltage, V
C
CEO
ECO
L
–55° to +100°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +100°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+260°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
150mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
55V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TA = +25°C, Note 1 unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Emitter
Reverse Breakdown Voltage V
Forward Voltage V
Reverse Current I
Capacitance C
(BR)RIR
F
R
i
= 10µA 6 – – V
IF = 60mA – – 1.7 V
VR = 5V – – 100 nA
V = 0, f = 1MHz – 30 – pF
Note 1. Stray irradiation can alter values of characteristics. Adequate shielding should be provided.
Electrical Characteristics (Cont’d): (TA = +25°C, Note 1 unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Detector
Collector–Emitter Breakdown Voltage V
Emitter–Collector Breakdown Voltage V
(BR)CEOIC
(BR)ECOIE
Collector Dark Current I
Capacitance C
CEO
ce
= 1mA 55 – – V
= 100µA 6 – – V
VCE = 45V – – 100 nA
VCE = 5V, f = 1MHz – 3.3 5.0 pF
Coupled
Collector “ON” Current I
CE(on)IF
= 5mA, VCE = 5V 0.15– – mA
IF = 20mA, VCE = 5V 1.0 – – mA
IF = 30mA, VCE = 5V 1.9 – – mA
Collector–Emitter Saturation Voltage V
Turn–On Time t
Turn–Off Time t
Note 1. Stray irradiation can alter values of characteristics. Adequate shielding should be provided.
1
CE(sat)IF
on
off
= 30mA, IC = 1.8mA – – 0.40 V
VCC = 5V, IF = 30mA, RL = 2.5kΩ – 8 – µs
– 50 – µs
.972 (24.69)
.750 (19.05)
D – Detector
+
E
D
+
E – Emitter
.129 (3.28) Max
.246 (6.25)
.136 (3.45) Min
Sensing Area
.122
.433 (11.0)
(3.1)
Max
.315
Seating
(8.0)
Plane
.295 (7.49) Max .110 (2.79) Max
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