NTE NTE3099 Datasheet

NTE3099
Infrared Emitting Diode
Bi–Directional
Features:
D Bi–Directional Light Emission Type D High Output: Fe = 1mW Typ at IF = 20mA
Applications:
D Light Source for Tape End Detector for VHS type VCR’s
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Power Dissipation, P
Forward Current, I Peak Forward Current (Note 1), I Reverse Voltage, V Operating Junction Temperature Range, T Storage Temperature Range, T Lead Temperature (During Soldering, Note 2), T
D
FM
R
opr
stg
L
75mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
50mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–25° to +85°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–40° to +85°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+260°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Pulse Width ≤ 100µs, Duty Ratio = 0.01 Note 2. For 3 seconds at a distance of 2.5mm from the bottom face of the resin package.
Electro–Optical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Forward Voltage V Peak Forward Voltage V Reverse Current I Terminal Capacitance C Radiant Flux Peak Emission Wavelength λp IF = 5mA 950 nm Half Intensity Wavelength ∆λ IF = 5mA 45 nm
FM
R
F
IF = 20mA 1.2 1.4 V
F
IFM = 500mA 3.0 4.0 V VR = 3V 10 µA V = 0, f = 1MHz 50 100 pF
t
IF = 20mA 0.7 1.0 2.0 mW
e
.157 (4.0)
.157 (4.0)
.039 (1.0)
.070 (1.78)
.049 (1.25) R (2 Places)
.236 (6.0)
A
.669
(17.0)
AK
.708
(18.0)
.019 (0.5)
.100 (2.54)
.019 (0.5)
K
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