NTE3098
Optoisolator
Phototransistor w/NPN Transistor Output
Description:
The NTE3098 consists of a phototransistor optically coupled to a gallium arsenide infrared emitting
diode in a single 4–Lead DIP type package.
Features:
D Collector–Emitter Voltage: V
D Current Transfer Ratio: IC/IF = 100% Min
D Isolation Voltage: BVS = 5000V
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
LED
Forward Current, I
F
Derate above 39°C 0.7mA/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulse Forward Current (100µs Pulse, 100pps), I
Power Dissipation, P
D
Derate above 25°C 1mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Reverse Voltage, V
Junction Temperature, T
R
J
DETECTOR
Collector–Emitter Voltage, V
Emitter–Collector Voltage, V
Collector Current, I
C
Collector Power Dissipation, P
CEO
ECO
C
Derate above 25°C 1.5mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Junction Temperature, T
J
COUPLED
Total Package Power Dissipation, P
Derate above 25°C 2.5mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Isolation Voltage (AC, 1 min., RH ≤ 60%), BV
Storage Temperature Range, T
Operating Temperature Range, T
Lead Temperature (During Soldering, 10sec), T
CEO
rms
stg
opr
= 55V Min
Min
T
FP
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
S
L
60mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
55V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
50mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
150mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
250mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5000V
rms
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +100°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+260°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Recommended Operating Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Supply Voltage V
Forward Current I
Collector Current I
Operating Temperature T
CC
F
C
opr
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Individual, LED
Forward Voltage V
Reverse Current I
Capacitance C
Individual, Detector
Collector–Emitter Breakdown Voltage V
Emitter–Collector Breakdown Voltage V
Collector Dark Current I
(BR)CEOIC
(BR)ECOIE
CEO
R
IF = 10mA 1.00 1.15 1.30 V
F
VR = 5V – – 10 µA
V = 0, f = 1MHz – 30 – pF
T
= 0.5mA 55 – – V
= 0.1mA 7 – – V
VCE = 24V – 10 100 nA
VCE = 24V, TA = +85°C – 2 50 µA
– 5 24 V
– 16 20 mA
– 1 10 mA
–25 – +85 °C
Capacitance (Collector–Emitter) C
CE
V = 0, f = 1MHz – 10 – pF
Coupled
Current Transfer Ratio IC/I
IF = 5mA, VCE = 5V 100 – 600 %
F
Current Transfer Ratio (Saturated) IC/IF (sat) IF = 1mA, VCE = 0.4V 30 – – %
Collector–Emitter Saturation Voltage V
CE(sat)IC
= 0.2mA, IF = 1mA – – 0.4 V
Isolation
Capacitance (Input–Output) C
Isolation Resistance R
Isolation Voltage BV
VS = 0, f = 1MHz – 0.8 – pF
S
VS = 500V 5x10
S
AC, 1 minute 5000 – – V
S
10
10
14
AC, 1 second – 10000 – V
DC, 1 minute – 10000 – V
– Ω
rms
rms
rms
Switching
Rise Time t
Fall Time t
Turn–On Time t
Turn–Off Time t
Turn–On Time t
Storage Time t
Turn–Off Time t
r
f
on
off
ON
s
OFF
VCC = 10V, IC = 2mA,
RL = 100Ω
VCC = 5V, IF = 16mA,
RL = 1.9kΩ
– 2 – µs
– 3 – µs
– 3 – µs
– 3 – µs
– 2 – µs
– 15 – µs
– 25 – µs