NTE NTE3091 Datasheet

NTE3091

Optoisolator

SCR Output

Description:

The NTE3091 is a gallium arsenide, infrared emitting diode coupled with a light activated silicon
controlled rectifier in a 6–Lead DIP type ppackage.

Absolute Maximum Rating: (TA = +25°C unless otherwise specified)
Infrared Emitting Diode

Reverse Voltage 6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Forward Current

Continuous 60mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak (Pulse Width = 1µs PPs) 3A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

LED Power Dissipation 100mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Derate Above 25°C 1.33mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Photo–SCR

Peak Forward Voltage 400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

RMS Forward Current 300mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak Forward Current (Pulse Width = 100µs, Duty Cycle = 1%) 10A. . . . . . . . . . . . . . . . . . . . . . . . . .

Surge Current (10ms) 5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Reverse Gate Voltage 6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Power Dissipation (TA = +25°C) 400mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Derate Above 25°C 5.3mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Power Dissipation (TC = +25°C) 1000mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Derate Above 25°C 13.3mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Total Device

Isolation Surge Voltage (Input–to–Output)

Peak 3535V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

RMS 2500V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Steady–State Isolation Voltage (Input–to–Output)

Peak 2100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

RMS 1500V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Temperature Range –55° to +100°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Storage Temperature Range –55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Lead Temperature (During Soldering, 10sec) +260°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Infrared Emitting Diode

Forward Voltage V
Reverse Leakage Current I
Capacitance C

IF = 10mA – 1.2 1.5 V

F

VR = 3V – – 10 µA

R

V = 0, f = 1MHz – 50 – pF

J

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Photo–SCR

Off–State Voltage V
Reverse Voltage V
On–State Voltage V
Off–State Current I
Reverse Current I

DM
RM

ID = 150µA, RGK = 10kΩ, TA = +100°C 400 – – V

DM
RM

ITM = 0.3A – 1.1 1.3 V

TM

400 – – V

VDM = 400V, RGK = 10kΩ, TA = +100°C – – 150 mA
VRM = 400V, RGK = 10kΩ, TA = +100°C – 20 – mA

Capacitance (Anode–Gate) V = 0, f = 1MHz (Gate–Cathode) – 350 – pF

Coupled

Input Current to Trigger VAK = 50V, RGK = 10kΩ – – 20 mA

VAK = 100V, RGK = 27kΩ – – 11 mA

Isolation Resistance Input–to–Output Voltage = 500V

DC

100 – – GΩ
Input–to–Output Capacitance Input–to–Output Voltage = 0, f = 1MHz – – 2 pF
Coupled dv/dt, Input–to–Output 500 – – V/s

Pin Connection Diagram

Anode

Gate1

6

Cathode

.070 (1.78) Max

.200 (5.08)

Max

2

3N.C.

546

123

.350 (8.89)

Max

.260
(6.6)
Max

.350

(8.89)

Max

5

Anode

Cathode

4

.300 (7.62)

.085 (2.16) Max

.100 (2.54)