NTE NTE3086 Datasheet
NTE3086
Optoisolator
Dual NPN Transistor Output
Description:
The NTE3086 is a standard dual optocoupler consisting of a GaAs Infrared LED and a silicon phototransistor per channel. This device is constructed with a high voltage insulation, double molded packaging process which offers 7.5KV withstand test capability.
Features:
D Two isolated Channels per Package
D 7500V Withstand Test Voltage
D CTR Minimum: 20%
Absolute Maximum Ratings:
Gallium Arsenide LED (Each Channel)
Power Dissipation (TA = +25°C), P
Derate Above 25°C 1.3mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Current, I
F
Continuous 60mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Pulse Width 1µs, 300pps) 3A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
100mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Phototransistor (Each Channel)
Power Dissipation (TA = +25°C), P
D
150mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25°C 2.0mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Breakdow Voltage, V
Collector–Base Breakdow Voltage, V
Emitter–Collector Breakdow Voltage, V
(BR)CEO
(BR)CBO
(BR)ECO
Total Device
Power Dissipation (TA = +25°C), P
D
400mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25°C 5.33mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range, T
Storage Temperature Range, T
opr
stg
Lead Temperature (During Soldering, 10sec Max), T
L
–55° to +100°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+250°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Gallium Arsenide LED
Forward Voltage V
Reverse Voltage V
Reverse Current I
Junction Capacitance V = 0, f = 1MHz – 80 – pF
IF = 20mA – 1.1 1.5 V
F
IR = 10µA 3 25 – V
R
VR = 3V – – 10 µA
R
30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
80V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Phototransistor Detector
Collector–Emitter Breakdown Voltage V
Emitter–Collector Breakdown Voltage V
Collector–Base Breakdown Voltage V
Collector–Emitter Leakage Current I
Collector–Emitter Capacitance C
Coupled Electrical Characteristics
Collector–Emitter Saturation Voltage V
DC Current Transfer Ratio CTR VCE = 10V, IF = 10mA 20 50 – %
Isolation Voltage V
Isolation Resistance R
Input to Output Capacitance f = 1MHz – 0.4 – pF
Bandwidth BW IC = 2mA, VCC = 10V, RL = 100Ω – 150 – kHz
Switching Times
Non–Saturated Rise Time, Fall Time tr, t
Non–Saturated Rise Time, Fall Time tr, t
Saturated Turn–On Time
(From 5V to 0.8V)
(BR)CEOIC
(BR)ECOIE
(BR)CBOIC
CEO
CE
CE(sat)IC
(BR)(I–O)
(I–O)
f
f
t
on(sat)
= 100µA, IF = 0 30 85 – V
= 100µA, IF = 0 6 13 – V
= 10µA, IF = 0 80 – – V
VCE = 10V, IF = 0 – 5 100 nA
VCE = 0, IF = 0 – 8 – pF
= 2mA, IF = 16mA – 0.2 0.4 V
t = 1sec 1500 2500 – V
V
= 500V 10
I–O
VCC = 10V, IC = 2mA, RL = 100Ω,
Note 1
VCC = 10V, IC = 2mA, RL = 1kΩ,
Note 1
RL = 2kΩ, IF = 40mA – 5 – µs
11
– 2.4 – µs
– 15 – µs
10
12
– Ω
Saturated Turn–Off Time
(From Saturation to 2V)
t
off(sat)
RL = 2kΩ, IF = 40mA – 25 – µs
Note 1. The frequency at which IC is 3dB down from the 1kHz value.
Anode
Cathode
1
2
3Cathode
4Anode
Emitter
8
7
Collector
Collector
6
Emitter
5
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