NTE NTE3085 Datasheet

NTE3085

Optoisolator

Photon Coupled Bilateral Analog FET

Description:

The NTE3085 consists of a gallium arsenide infrared emitting diode coupled to a symmetrical silicon
photo detector. The detector is electrically isolated from the input and performs like an ideal isolated
FET designed for distortion–free control of low AC and DC analog signals.

Features:
As A Remote Variable Resistor

D ≤ 100Ω to ≥ 300MΩ
D ≥ 99.9% Linearity
D ≤ 15pF Shunt Capacitance
D ≥ 100GΩ I/O Isolation Resistance

As An Analog Signal Switch

D Extremely Low Offset Voltage
D 60V

Signal Capability

P–P

D No Charge Injection or Latchup

, t

D t

on

≤ 15µs

off

Absolute Maximum Ratings:

(TA = +25°C unless otherwise specified)

Infrared Emitting Diode

Power Dissipation (TA = +25°C), P

D

Derate Above 25°C 2.0mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Forward Current, I

F

Continuous 60mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak (Pulse Width 100µs, 100pps) 500mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak (Pulse Width 1µs, 300pps) 3A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Reverse Voltage, V

R

Photo Detector

Power Dissipation (T

= +25°C), P

A

D

Derate Above 25°C 4.0mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Breakdow Voltage, V
Continouos Detector Current, I

(BR)46

D

Total Device

Surge Isolation Voltage (Input to Output), V

ISO

Peak 2500V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

RMS 1770V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Steady–State Isolation Voltage (Input to Output), V

ISO

Peak 1500V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

RMS 1060V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Temperature Range, T
Storage Temperature Range, T

opr

stg

Lead Temperature (During Soldering, 10sec Max), T

150mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

300mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

±30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

±100mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +100°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

L

+260°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Infrared Emitting Diode

Forward Voltage V
Reverse Current I

IF = 16mA – 1.1 1.75 V

F

VR = 6V – – 10 µA

R

Capacitance V = 0, f = 1MHz – 50 – pF
Photo–Detector (Either Polarity)
Breakdown Voltage V
Off–State Dark Current I

(BR)46I46

46

= 10µA, IF = 0 30 – – V
V46 = 15V, IF = 0 – – 50 nA
V46 = 15V, IF = 0, TA = +100°C – – 50 µA

Off–State Resistance r
Capacitance C

46

V46 = 15V, IF = 0 300 – – MΩ
V46 = 0, IF = 0, f = 1MHz – – 15 pF

46

Coupled Electrical Characteristics

On–State Resistance r

46

IF = 16mA, I46 = 100µA – – 200 Ω
IF = 16mA, I64 = 100µA – – 200 Ω

Isolation Resistance (Input to Output) V

ISO

V10 = 500V 100 – – GΩ

Input to Output Capacitance V10 = 0, f = 1MHz – – 2.5 pF
Turn–On Time t
Turn–Off Time t
Resistance, Non–Linearity and

Asymmetry

on
off

IF = 16mA, RL = 50Ω, V46 = 5V – – 15 µs

– – 15 µs

IF = 16mA, i46 = 25µA

RMS

,

– – 0.1 %

f = 1kHz

.070 (1.78) Max

.200

(5.08)

Max

.085 (2.16) Max

546

123

.350 (8.89)

Max

.100 (2.54)

.260

(6.6)

Max

.350

(8.89)

Max

Anode

Cathode

.300 (7.62)

1

2

3N.C.

6

5

4

Drain

N.C.

Source