NTE NTE3083 Datasheet

NTE3083

Optoisolator

NPN Darlington Transistor Output

Description:

The NTE3083 contains a gallium arsenide infrared emitter optically coupled to a silicon planer photo–
darlington in a 6–Lead DIP type package.

Features:

D High Sensitivity: 1mA on the Input will Sink a TTL gate

12

D High Isolation: 3550VDC, 10

Absolute Maximum Ratings:

Storage Temperature Range, T
Operating Temperature Range, T
Lead Temperature (During Soldering, 10sec), T
Total Power Dissipation (T

= +25°C), P

A

Derate Linearly to 100°C 3.3mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Input to Output Isolation Voltage (1sec), V

Ω, 0.5pF

stg

opr

D

ISOL

–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +100°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

L

+260°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

250mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

3550VDC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Input Diode

Forward Current, I
Reverse Voltage, V

F

R

Peak Forward Current (1µs pulse, 300pps), I

Output Darlington

Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I

C

Electro–Optical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

Isolation Between Emitter and Detector

Capacitance C
Resistance R
Voltage Breakdown V

CEO

CBO

EBO

(TA = +25°C unless otherwise specified)

iso
iso
iso

60mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

peak 3A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

F

30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

125mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

f = 1MHz – 0.5 – pF
V = 500VDC 101110
t = 1sec 3550 – – VDC

12

– Ω

3V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electro–Optical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Emitter (GaAs LED)

Forward Voltage V
Reverse Voltage V
Junction Capacitance C

Detector (Silicon Photo–Darlington)

Collector Breakdown Voltage V
Base Breakdown Voltage V
Emitter Breakdown Voltage V
Collector Leakage Current I
Saturation Voltage V

(BR)CEOIC
(BR)CBOIC
(BR)EBOIE

CEO

CE(sat)IC

Base Photo–Current I
Darlington Gain h
Collector–Emitter Capacitance C

FE
CE

Switching Times, Coupled

Rise Time, Fall Time tr, t
TTL Gate Turn–On Time t
TTL Gate Turn–Off Time t
DC Collector Current Transfer

ON

OFF

CTR IF = 10mA, VCE = 5V 200 400 – %

Ratio

IF = 20mA – 1.15 1.50 V

F

IR = 10µA 3.0 25.0 – V

R

VR = 0V – 50 – pF

J

= 1mA 30 60 – V
= 10µA 30 60 – V

= 10µA 6 8 – V

VCE = 10V – 1 100 nA

= 2mA, IF = 1mA – 0.8 1.0 V
IC = 10mA, IF = 5mA – 0.8 1.0 V
IC = 50mA, IF = 10mA – 0.9 1.2 V

B

VCB = 5V, IF = 10mA – 2 – µA
IB = 1µA, VCE = 1V – 50k –
VCE = 10V – 6 – pF

VCC = 10V, IC = 10mA, RL = 100Ω – 80 – µs

f

IF = 1mA – 200 – µs
IF = 1mA – 400 – µs

Anode

Cathode

546

123

1

2

3N.C.

Base

6

5

Collector

Emitter

4

.070 (1.78) Max

.350 (8.89)

Max

.200 (5.08)

Max

.085 (2.16) Max

.260
(6.6)
Max

.300 (7.62)

.350

(8.89)

Max

.100 (2.54)