NTE NTE3081 Datasheet
NTE3081
Optoisolator
NPN Transistor Output
Description:
The NTE3081 consists of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor
in a low cost plastic package with lead spacing compatible with dual–in–line packages.
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Total Device
Surge Isolation Voltage (Input to Output), V
Peak 6000V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RMS 4242V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Steady–State Isolation Voltage (Input to Output), V
Peak 4500V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RMS 3200V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range, T
Storage Temperature Range, T
J
stg
Lead Temperature (During Soldering, 5sec Max), T
Infrared Emitting Diode (Emitter)
Forward Current, I
F
Continuous 60mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Pulse Width ≤ 1µs, PRR ≤ 300pps) 3A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Reverse Voltage, V
Power Dissipation, P
R
E
Derate Above 25°C 1.67mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Phototransistor (Detector)
Continuous Collector Current, I
Collector–Emitter Voltage, V
Emitter–Collector Voltage, V
Power Dissipation, P
D
C
CEO
ECO
Derate Above 25°C 2.5mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
ISO
ISO
L
–55° to +85°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +85°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+260°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
150mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Infrared Emitting Diode
Reverse Breakdown Voltage V
(BR)RIR
Forward Voltage V
Reverse Current I
Capacitance C
F
R
i
= 10µA 4 – – V
IF = 60mA – – 1.7 V
VR = 3V – – 1.0 µA
V = 0, f = 1MHz – 30 – pF
Phototransistor
Collector–Emitter Breakdown Voltage V
Emitter–Collector Breakdown Voltage V
(BR)CEOIC
(BR)ECOIE
Collector Dark Current I
Capacitance C
CEO
ce
= 1mA, IF = 0 30 – – V
= 100µA, IF = 0 6 – – V
VCE = 10V, IF = 0 – 5 100 nA
VCE = 5V, f = 1MHz – 3.3 – pF
Coupled Characteristics
DC Current Transfer Ratio CTR IF = 10mA, VCE = 10V 20 – – %
Collector–Emitter Saturation Voltage V
CE(sat)IF
Isolation Resistance R
IO
= 10mA, IC = 500mA – 0.1 0.4 V
Input to Output Voltage = 500VDC,
100 – – GΩ
Note 1
Input to Output Capacitance C
Input to Output Voltage = 0,
io
– 0.5 – pF
f = 1MHz, Note 1
Turn–On Time t
on
VCE = 10V, IC = 2mA, RL = 100Ω – 9 – µs
VCE = 5V, IF = 10mA, RL = 10kΩ – 4 – µs
Turn–Off Time t
off
VCE = 10V, IC = 2mA, RL = 100Ω – 6.5 – µs
VCE = 5V, IF = 10mA, RL = 10kΩ – 165 – µs
Note 1. Measured w i th input diode l eads s horted t ogether, a nd output d etector leads s horted t ogether.
D+
E
+
.250 (6.35)
Max
.350
(8.89)
Max
.300
(7.62)
Min
.025 (.635)
.025
(.635)
Seating Plane
Anode
.375 (9.52)
Max
1
2Cathode
4
Emitter
Collector
3
.020 (.508)
Square Typ
.300 (7.62)
.100 (2.54)
Loading...