NTE NTE3081 Datasheet

NTE3081

Optoisolator

NPN Transistor Output

Description:

The NTE3081 consists of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor
in a low cost plastic package with lead spacing compatible with dual–in–line packages.

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Total Device

Surge Isolation Voltage (Input to Output), V

Peak 6000V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

RMS 4242V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Steady–State Isolation Voltage (Input to Output), V

Peak 4500V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

RMS 3200V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Temperature Range, T
Storage Temperature Range, T

J

stg

Lead Temperature (During Soldering, 5sec Max), T

Infrared Emitting Diode (Emitter)

Forward Current, I

F

Continuous 60mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak (Pulse Width ≤ 1µs, PRR ≤ 300pps) 3A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Reverse Voltage, V
Power Dissipation, P

R

E

Derate Above 25°C 1.67mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Phototransistor (Detector)

Continuous Collector Current, I
Collector–Emitter Voltage, V
Emitter–Collector Voltage, V
Power Dissipation, P

D

C
CEO
ECO

Derate Above 25°C 2.5mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

ISO

ISO

L

–55° to +85°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +85°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+260°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

4V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

100mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

100mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

150mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Infrared Emitting Diode

Reverse Breakdown Voltage V

(BR)RIR

Forward Voltage V
Reverse Current I
Capacitance C

F

R

i

= 10µA 4 – – V
IF = 60mA – – 1.7 V
VR = 3V – – 1.0 µA
V = 0, f = 1MHz – 30 – pF

Phototransistor

Collector–Emitter Breakdown Voltage V
Emitter–Collector Breakdown Voltage V

(BR)CEOIC
(BR)ECOIE

Collector Dark Current I
Capacitance C

CEO

ce

= 1mA, IF = 0 30 – – V

= 100µA, IF = 0 6 – – V
VCE = 10V, IF = 0 – 5 100 nA
VCE = 5V, f = 1MHz – 3.3 – pF

Coupled Characteristics

DC Current Transfer Ratio CTR IF = 10mA, VCE = 10V 20 – – %
Collector–Emitter Saturation Voltage V

CE(sat)IF

Isolation Resistance R

IO

= 10mA, IC = 500mA – 0.1 0.4 V
Input to Output Voltage = 500VDC,

100 – – GΩ

Note 1

Input to Output Capacitance C

Input to Output Voltage = 0,

io

– 0.5 – pF

f = 1MHz, Note 1

Turn–On Time t

on

VCE = 10V, IC = 2mA, RL = 100Ω – 9 – µs
VCE = 5V, IF = 10mA, RL = 10kΩ – 4 – µs

Turn–Off Time t

off

VCE = 10V, IC = 2mA, RL = 100Ω – 6.5 – µs
VCE = 5V, IF = 10mA, RL = 10kΩ – 165 – µs

Note 1. Measured w i th input diode l eads s horted t ogether, a nd output d etector leads s horted t ogether.

D+

E

+

.250 (6.35)

Max

.350

(8.89)

Max

.300

(7.62)

Min

.025 (.635)

.025

(.635)

Seating Plane

Anode

.375 (9.52)

Max

1

2Cathode

4

Emitter

Collector

3

.020 (.508)

Square Typ

.300 (7.62)

.100 (2.54)