NTE NTE300, NTE307 Datasheet

NTE300 (NPN) & NTE307 (PNP)

Silicon Complementary Transistors

Audio Power Amplifier

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)

Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I

C

Collector Power Dissipation (T
Operating Junction Temperature, T
Storage Temperature Range, T

CBO

EBO

CEO

= +25°C), P

C

J

stg

C

50V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

40V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1.5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

7W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

Collector–Base Breakdown Voltage V
Collector–Emitter Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Collector–Emitter Saturation Voltage V
Base–Emitter Voltage V

(TA = +25°C unless otherwise specified)

(BR)CBOIC
(BR)EBOIC
(BR)EBOIE

CBO
EBO

FE

CE(sat)IC

BE

VCB = 25V, IE = 0 – – 1 µA
VEB = 5V, IC = 0 – – 1 µA
VCE = 4V, IC = 500mA 55 – 300

VCE = 4V, IC = 50mA – 0.7 – V

= 1mA, IE = 0 50 – – V
= 10mA, RBE = ∞ 40 – – V
= 1mA, IC = 0 5 – – V

= 1A, IB = 50mA – – 1 V

.180 (4.57).380 (9.56)

1.200

(30.48)

Ref

.500

(12.7)

.300

(7.62)

.400

(10.16)

Min

C

EBC

.132 (3.35) Dia

.325

(9.52)

.070 (1.78) x 45°

Chamf

.050 (1.27)

.100 (2.54) .100 (2.54)