NTE NTE3044 Datasheet

NTE3044
Optoisolator
NPN Darlington Transistor Output
Description:
The NTE3044 consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector in an 6–Lead DIP type package. This device is designed for use in applications requiring high sensitivity at a low input current.
Features:
Applications:
D Appliances, Measuring Instruments D I/O Interfaces for Computers D Programmable Controllers D Portable Electronics D Interfacing and Coupling Systems of Different Potentials and Impedances D Solid State Relays
Absolute Maximum Ratings:
(TA = +25°C unless otherwise specified)
Input LED
Reverse Voltage, V Continuous Forward Current, I
R
F
LED Power Dissipation (with Negligible Power in Output Detector, T
= +25°C), P
A
D
3V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
60mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
120mW. . . . .
Derate Above 25°C 1.41mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output Detector
Collector–Emitter Voltage, V Emitter–Collector Voltage, V
CEO ECO
Detector Power Dissipation (with Negligible Power in Output Detector, T
= +25°C), P
A
D
80V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
150mW.
Derate Above 25°C 1.76mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device
Isolation Surge Voltage (Peak AC Voltage, 60Hz, 1sec Duration, Note 1), V Total Device Power Dissipation (T
= +25°C), P
A
D
ISO
7500V. . . . . . . . . . .
250mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25°C 2.94mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Ambient Operating Temperature Range, T Storage Temperature Range, T
stg
A
Lead Temperature (During Soldering, 1/16” from Case, 10sec), T
L
–55° to +100°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+260°C. . . . . . . . . . . . . . . . . . . . .
Note 1. Isolation surge voltage is an internal dielectric breakdown rating. For this test, Pin1 and Pin2
are common, and Pin4, Pin5, and Pin6 are common.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Input LED
Reverse Leakage Current I Forward Voltage V Capacitance C VR = 0, f = 1MHz 18 pF Photodarlington (IF = 0) Collector–Emitter Dark Current I Collector–Emitter Breakdown Voltage V Emitter–Collector Breakdown Voltage V
Coupled
Collector Output Current I Isolation Surge Voltage V Isolation Resistance R Isolation Capacitance C
Switching
Turn–On Time t Turn–Off Time t Rise Time t Fall Time t
R
CEO (BR)CEOIC (BR)ECOIE
C ISO ISO ISO
on off
VR = 3V 0.05 10 µA IF = 10mA 1.15 2.0 V
F
VCE = 60V 1 µA
= 1mA 80 V
= 100µA 5 V
VCE = 1.5V, IF = 10mA 30 mA 60Hz Peak AC, 5sec, Note 2, Note 3 7500 V V = 500V, Note 2 10 V = 0, f = 1MHz, Note 2 0.2 pF
VCC = 10V, RL = 100Ω, IF = 5mA
r f
3.5 µs 95 µs 1 µs 2 µs
11
Note 2. For this test , L E D Pin1 a n d Pin2 a r e commo n a n d P h ot ot ra ns is to r Pin4 a n d Pin5 are comm on . Note 3. Isolation Surge Voltage, V
Anode
Cathode
, is an internal device dielectric breakdown rating.
ISO
Pin Connection Diagram
1
2
3N.C.
6
N.C.
5
Collector
Emitter
4
Loading...
+ 1 hidden pages