NTE NTE3043 Datasheet
NTE3043
Optoisolator
NPN Transistor Output
Description:
The NTE3043 is an optically coupled isolator consisting of a Gallium Arsenide infrared emitting diode
and an NPN silicon phototransistor mounted in a standard 4–Lead DIP type package.
Features:
D High Output Voltage: V
(BR)CEO
D Controlled Current Transfer Ratio
D Maximum Specified Switching Times
D High Isolation Voltage
D Low Cost DIP Type Package
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Input LED
DC Forward Current, I
F
Continuous 60mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (1µs p.w. 300pps) 3A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DC Reverse Voltage, V
Power Dissipation, P
R
D
Derate Above 25°C 1.2mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output Transistor
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector–Base Voltage, V
Power Dissipation, P
D
CEO
EBO
CBO
Derate Above 25°C 2.67mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Coupled
Power Dissipation, P
D
Derate Above 25°C 3.5mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range, T
Storage Temperature Range, T
Lead Temperature (During Soldering, 1/16” from case, 10sec), T
stg
= 80V
opr
3V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
90mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
80V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
200mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
260mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +100°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
L
+260°C. . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Input LED
Reverse Leakage Current I
Forward Voltage V
Reverse Breakdown Voltage V
R
VR = 3V – – 10 µA
IF = 20mA – – 1.5 V
F
IR = 10µA 3.0 – – V
R
Forward Voltage Temperature Coefficient – –1.8 – mV/°C
Junction Capacitance C
VF = 0, f = 1MHz – 50 – pF
J
VF = 1V, f = 1MHz – 65 – pF
Output Transistor
Collector–Emitter Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Collector–Base Breakdown Voltage V
(BR)CEOIC
(BR)EBOIE
(BR)CBOIC
Collector–Emitter Dark Current I
DC Current Gain h
CEO
FE
= 1mA, IF = 0 80 – – V
= 100µA, IF = 0 5 – – V
= 10µA 100 – – V
VCE = 10V, IF = 0 – – 60 nA
VCE = 6V, IC = 100µA – 170 –
Collector–Emitter Capacitance VCE = 0, f = 1MHz – 8 – pF
Collector–Base Capacitance VCE = 5V, f = 1MHz – 20 – pF
Emitter–Base Capacitance VEB = 0, f = 1MHz – 10 – pF
Coupled
DC Current Transfer Ratio IC/I
IF = 10mA, VCE = 10V 70 125 210 %
F
IF = 16mA, VCE = 0.4V – 12.5 – %
Current Transfer Ratio, Collector–Base IF = 10mA, VCB = 10V – 0.15 – %
Input–Output Isolation Resistance R
Collector–Emitter Saturation Voltage V
CE(sat)IF
Input–Output Capacitance C
Surge Isolation Relative Humidity < 50%,
V
IO
ISO
= 500V
DC
10 – – Ω
= 16mA, IC = 2mA – – 0.4 V
f = 1MHz – 0.5 – pF
IO
4000 – – V
I1–0 < 10µb
t = 1sec 3000 – – V
Steady State Isolation Relative Humidity < 50% 3500 – – V
t = 1min 2500 – – V
Switching Times
Non–Saturated Turn–On Time t
Non–Saturated Turn–Off Time t
Saturated Turn–On Time t
Saturated Turn–Off Time t
on
off
on
off
RL = 100, IC = 200mA, VCC = 5V – 4.5 15 µs
– 3.5 15 µs
RL = 1.9kΩ, IF = 16mA – 3.2 – µs
– 50 – µs
DC
AC
DC
AC
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