NTE NTE3041 Datasheet

NTE3041

Optoisolator

NPN Transistor Output

Description:

The NTE3041 is an optoisolator in a 6–Lead DIP type package consisting of a gallium arsenide in­frared emitting diode optically coupled to a monolithic silicon phototransistor detector.

Features:

D High Current Transfer Ratio: 100% Min @ Spec Conditions
D Guaranteed Switching Speeds

Applications:

D General Purpose Switching Circuits
D Interfacing and Coupling Systems of Different Potentials and Impedances
D Regulation Feedback Circuits
D Monitor & Detection Circuits
D Solid State Relays

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Input LED

Reverse Voltage, V
Continuous Forward Current, I
LED Power Dissipation (With Negligible Power in Output Detector), P

R

F

D

Derate Above 25°C 1.41mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Output Transistor

Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector–Base Voltage, V
Continuous Collector Current, I
Detector Power Dissipation (With Negligible Power in Output Detector), P

CEO

EBO

CBO

C

D

Derate Above 25°C 1.76mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Total Device

Isolation Source Voltage (Peak AC Voltage, 60Hz, 1sec Duration, Note 1), V
Total Device Power Dissipation, P

D

Derate Above 25°C 2.94mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Ambient Temperature Range, T
Storage Temperature Range, T

stg

Lead Temperature (During Soldering, 1/16” from case, 10sec), T

A

L

ISO

–55° to +100°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

60mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

120mW. . . . . . . . . . . . . . . . .

30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

7V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

70V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

150mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

150mW. . . . . . . . . . . . .

7500V. . . . . . . . . .

250mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+260°C. . . . . . . . . . . . . . . . . . . . .

Note 1. Isolation Surge V oltage is an internal device dielectric breakdown rating. For this test, Pin1

and Pin2 are common, and Pin4, Pin5, and Pin6 are common.

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Input LED

Forward Voltage V

Reverse Leakage Current I
Capacitance C

Output Transistor

Collector–Emitter Dark Current I

Collector–Base Dark Current I

Collector–Emitter Breakdown Voltage V
Collector–Base Breakdown Voltage V
Emitter–Base Breakdown Voltage V

CEO

CBO

(BR)CEOIC
(BR)CBOIC

(BR)EBOIE

DC Current Gain h
Collector–Emitter Capacitance C
Collector–Base Capacitance C
Emitter–Base Capacitance C

Coupled

R

FE
CE
CB
EB

IF = 10mA 0.8 1.15 1.5 V

F

IF = 10mA, TA = –55°C 0.9 1.3 1.7 V
IF = 10mA, TA = +100°C 0.7 1.05 1.4 V
VR = 6V – – 10 µA
V = 0, f = 1MHz – 18 – pF

J

VCE = 10V – 1 50 nA
VCE = 30V, TA = +100°C – – 500 µA
VCB = 10V – 0.2 20 nA
VCB = 10V, TA = +100°C – 100 – nA

= 1mA 30 45 – V
= 100µA 70 100 – V

= 100µA 7.0 7.8 – V
IC = 2mA, VCE = 5V – 400 –
VCE = 5V, f = 1MHz – 7 – pF
VCB = 0, f = 1MHz – 19 – pF
VEB = 0, f = 1MHz – 9 – pF

Output Collector Current I

Collector–Emitter Saturation Voltage V

CE(sat)IC

Turn–On Time t
Turn–Off Time t
Rise Time t
Fall Time t
Isolation Voltage V
Isolation Current I
Isolation Resistance R
Isolation Capacitance C

C

on
off

r
f

ISO

ISO

ISO
ISO

IF = 10mA, VCE = 10V 10 30 – mA
IF = 10mA, VCE = 10V, TA = –55°C 4 – – mA
IF = 10mA, VCE = 10V, TA = +1 00°C 4 – – mA

= 0.5mA, IF = 10mA – 0.14 0.3 V

IC = 2mA, VCC = 10V, RL = 100Ω – 7.5 10 µs

– 5.7 10 µs
– 3.2 – µs
– 4.7 – µs

f = 60Hz, t = 1sec 7500 – – V
V

= 3550V

I–O

pk

V = 500V 10

– – 100 µA

11

– –

Ω

V = 0, f = 1MHz – 0.2 2.0 pF