NTE NTE3036 Datasheet

NTE3036

Phototransistor

Silicon NPN Photo Darlington Light Detector

Description:

The NTE3036 is a silicon NPN photo Darlington light detector in a TO18 type package designed for
use in applications such as industrial inspection, processing and control, counter, sorters, switching
and logic circuit or any design requiring very high radiation sensitivity at low light levels.

Features:

D Popular TO18 Type Hermetic Package for Easy Handling and Mounting
D Sensitive Throughout Visible and Near Infrared Spectral Range for Wider Application
D Minimum Light Current: 12mA @ H = 0.5mW/cm
D External Base for Added Control

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, V

Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Light Current, I

L

Total Device Dissipation (TA = +25°C), P

CBO

CEO

EBO

D

Derate Above 25°C 1.43mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature Range, T
Storage Temperature Range, T

stg

J

2

50V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

40V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

250mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

250mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Static Characteristics

Collector Dark Current I
Collector–Base Breakdown Voltage V
Collector–Emitter Breakdown Voltage V
Emitter–Base Breakdwon Voltage V

CEO
(BR)CBOIC
(BR)CEOIC
(BR)EBOIE

VCE = 10V, H ∼ 0 – 10 100 nA

= 100µA 50 100 – V
= 100µA 40 80 – V
= 100µA 10 15.5 – V

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Optical Characteristics

Light Current I
Collector–Emitter Saturation Voltage V
Photo Current Rise Time t
Photo Current Fall Time t

CE(sat)IL

L

VCC = 5V, RL = 10Ω, Note 1 12 20 – mA

= 10mA, H = 2mW/cm2 at 2870°K – 0.6 1.0 V

RL = 10Ω, IL = 1mA Peak, Note 2 – 15 100 µs

r

RL = 10Ω, IL = 1mA Peak, Note 2 – 65 150 µs

f

Note 1. Radiation flux density (H) is equal to 0.5mW/cm2 emitted from a tungsten source at a color

temperature of 2780°K.

Note 2. For unsaturated response time measurement, radiation is provided by pulse GaAs (gallium–

arsenide) light emitting diode (λ 0.9µm) with a pulse width equal to or greater than 500µs,
IL = 1mA peak.

.228 (5.79) Max
.185 (4.69)

.276

.177
(4.5)

(7.01)

Max

.018 (0.45) Dia Typ

.100 (2.54) Dia

Base

Collector/CaseEmitter

.500

(12.7)

Min