NTE NTE3033 Datasheet

NTE3033

Infrared Photodiode

Features:

D High Sensitivity, High Reliability
D Fast Response, High Speed Modulation
D Peak Sensitivity Wavelength Compatible with Infrared Emitters
D Wide Detection Area, Wide Half Angle

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)

Reverse Voltage, VR 30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Power Dissipation, PD 100mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Temperature range, T
Storage Temperature Range, T

Electro–Optical Characteristics: (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

–30° to +85°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

opr

–40° to +100°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

stg

Dark Current I
Light Current I
Peak Emission Wavelength λ
Rise Time t

Fall Time t

Capacitance C
Beam Angle Note 2 – 65 – deg

VR = 10V – 5 50 nA

D

VR = 10V, L = 1000 1x, Note 1 35 50 – µA

L

VR = 10V – 900 – nm

P

VR = 10V, RL = 1kΩ – 50 – ns

r

VR = 10V, RL = 100kΩ – 5 – µs
VR = 10V, RL = 1kΩ – 50 – ns

f

VR = 10V, RL = 100kΩ – 5 – µs
VR = 0, f = 1MHz – 70 – pF

t

Note 1. Source: Tungsten filament lamp 2856°K
Note 2. The angle when the light current is halved.

Device
Center

.197
(5.0)

.111 (2.8).276 (7.0)

.315
(8.0)

*

.091
(2.3)

Anode Cathode

.024 (0.6)

.512

(13.0)

Min

.016 (0.41)

.200 (5.08)

* Denotes Anode mark