NTE NTE3032 Datasheet
NTE3032
Phototransistor Detector
NPN–Si, Visible & IR
Description:
The NTE3032 is a silicon NPN phototransistor detector in a TO18 type package designed for use in
industrial inspection, processing and control, counter, sorter, switching, and logic circuit applications
or any design requiring radiation sensitivity and stable characteristics.
Features:
D Sensitive Throughout Visible and Near Infrared Spectral Range for Wider Application
D Minimum Light Current: 8mH @ H = 5mW/cm
D External Base for Added Control
D Annular Passivated Structure for Stability and Reliability
D Popular TO18 Type Package for Easy Handling and Mounting
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Collector Voltage, V
Total Device Dissipation, P
CEO
CBO
ECO
D
Derate Above 25°C 1.43mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
Storage Temperature Range, T
stg
J
2
30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
80V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
150mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Static Characteristics
Collector Dark Current I
Collector–Base Breakdown Voltage V
Emitter–Collector Breakdown Voltage V
Optical Characteristics
Light Current I
Photo Current Rise Time t
Photo Current Fall Time t
CEO
(BR)CBOIC
(BR)ECOIE
L
r
f
VCC = 10V, H ∼ 0 – – 100 nA
= 100µA 80 – – V
= 100µA 5 – – V
VCC = 5V, RL = 100Ω, Note 1 8 – – mA
RL = 100Ω, IL = 1mA (Peak),
Note 2
– 15 – µs
– 15 – µs
Note 1. Radiation flux density (H) equal to 5mW/cm2 emitted from a t ungsten source at a color
temperature of 2870 K.
Note 2. For unsaturated response time measurement, radiation is provided by pulsed GaAs (gallium
arsenide) light–emitting diode (λ ∼ µm) with a pulse width equal to or greater than 10µs,
IL = 1mA Peak.
.210 (5.33) Dia
.120 (3.05) Dia
Window on
Center Line
.150 (3.81) Die
Seating Plane
.184 (4.67) Dia
.240
(6.09)
.021
(0.53)
.500
(12.7)
Min
.018 (0.45) Dia Typ
.100 (2.54) Dia
Collector Emitter
.040 (1.02)
45°
Base
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