NTE NTE3029A Datasheet

NTE3029A

Infrared–Emitting Diode

Description:

The NTE3029A 940nm LED is a multi–purpose device designed for use in numerous applications.
This Gallium Arsenide device is manufactured to tight tolerances for maximum performance and long
lifetime.

Features:

D Low Cost
D Low Degradation
D New Mold Technology Improves Performance under Variable Environmental Conditions
D New Lens Design offers Improved Optical Performance

Applications:

D Low Bit Rate Communication Systems
D Keyboards
D Coin Handlers
D Paper Handlers

D Touch Screens
D Shaft Encoders
D General Purpose Interruptive and Reflective

Event Sensors

Absolute Maximum Ratings:

Reverse Breakdown Voltage, V
Forward Current, I

F

R

6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Continuous 100mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak Pulse 1A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Device Power Dissipation (TA = +25°C, Note 2), P

D

100mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Derate Above 55°C 2mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Ambient Operating Temperature Range, T
Storage Temperature Range, T

stg

opr

Lead Temperature (During Soldering, Note 3), T

L

–40° to +100°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–40° to +100°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+260°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Note 1. The NTE3029A is a discontinued device and has been replaced by NTE3029B.
Note 2 Measured with device soldered into a typical printed circuit board.
Note 3 Maximum exposure time: 5sec. Minimum of 1/16 inch from the case. A heat sink should

be applied in order to prevent the case temperature from exceeding +100°C.

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Reverse Leakage Current I
Forward Voltage V
Temperature Coefficient of Forward Voltage ∆V
Capacitance C V = 0V, f = 1MHz – 24 50 pF

VR = 6V – 0.05 100 µA

R

IF = 50mA – 1.3 1.5 V

F

F

– –1.6 – mV/°C

Optical Characteristics: (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Peak Emission Wavelength λ
Spectral Half Power Wavelength – 48 – nm
Spectral Output Temperature Shift – 0.3 – nm/°C
Axial Power Output Intensity P
Intensity Per Unit Solid Angle E
Power Half–Angle Ω – ±20 – °
Rise Time and Fall Time tr, t

IF = 50mA 930 940 950 nm

P

IF = 20mA, Note 4 50 150 – µW/ sq cm

O

IF = 20mA, Note 4 0.2 0.65 – mW/Sr

e

f

– 1.0 – µs

Note 4 Measured using a 11.28 mm diameter detector placed 21 mm away from the device under

test.

.160 (4.06)

.045 (1.14) Dia

.120

.125

(3.17)

(3.04)

.168

(4.27)

.750

(19.05)

Max

.103

(2.62)

.020 (.508)

KA

.100 (2.54)

.060 (1.52)