NTE NTE3027 Datasheet

NTE3027

Infrared Emitting Diode

High Speed for Remote Control

Description:

The NTE3027 is an infrared emitting diode in standard GaAs on GaAs technology, molded in a
clear, blue–grey tinted plastic package.

Features:

D Low Forward Voltage
D High Radiant Power and Radiant Intensity
D Suitable for DC and High Pulse Current Operation
D High Reliability
D Standard T–1 3/4 (5mm) Package

Applications:

Infrared remote control and free air transmission systems with low forward voltage and comfort­able radiation and angle requirements in combination with PIN photodiodes or phototransistors.

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Reverse Voltage, V
Forward Current, I

R

F

Continuous 150mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak (Note 1) 300mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Surge Forward Current (Note 2), I
Power Dissipation, P
Junction Temperature, T

D

J

Operating Temperature Range, T
Storage Temperature Range, T
Lead Soldering Temperature (t ≤ 5sec, 2mm from case), T
Thermal Resistance, Junction–to–Ambient, R

FSM

opr

stg

L

thJA

Note 1. tp = 100µs, tp/T = 0.5
Note 2. tp = 100µs

5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

2.5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

210mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+100°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +100°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +100°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+260°C. . . . . . . . . . . . . . . . . . . . . . . . . . .

375K/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics: (TA = +25°C unless otherwis specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Forward Voltage V

IF = 100mA, tp = 20ms – 1.3 1.7 V

F

IF = 1.5A, tp = 100µs – 2.2 3.4 V
Temperature Coefficient of Forward Voltage IF = 100mA – –1.3 – mV/°C
Reverse Current I
Junction Capacitance C
Radient Intensity I

VR = 5V – – 100 µA

R

VR = 0, f = 1MHz, E = 0 – 30 – pF

j

IF = 100mA, tp = 20ms 10 17 – mW/sr

e

IF = 1.5A, tp = 100µs 85 160 – mW/sr
Angle of Half Intensity Φ – ±22 – deg
Radient Power Φ

IF = 100mA, tp = 20ms – 14 – mW

e

Temperature Coefficient of Radient Intensity IF = 20mA – –0.8 – %/°C
Peak Wavelength λ

IF = 100mA – 950 – nm

p

Temperature Coefficient of Peak Wavelength IF = 100mA – 0.2 – nm/°C
Spectral Bandwidth ∆λ IF = 100mA – 50 – nm
Rise Time t

IF = 100mA – 800 – ns

r

IF = 1.5A – 400 – ns
Fall Time t

IF = 100mA – 800 – ns

f

IF = 1.5A – 400 – ns

.200 (5.08) Dia

.340

(8.63)

.100 (2.54)

.050 (1.27) Typ

.230

(5.84)

Dia

.040

(1.01)

.750

(19.05)

Min

Flat Denotes
Cathode

.100 (2.54)

.100 (2.54) R

Seating Plane

.025 (0.63) Max Sq
.050 (1.27)

.100 (2.54)

Tolerance ±.010 (.254)