NTE NTE3017 Datasheet
NTE3017
Infrared Emitting Diode
High Speed for Remote Control
Description:
The NTE3017 is an infrared emitting diode in standard GaAs on GaAs technology, molded in a
clear, blue–grey tinted plastic package.
Features:
D Low Forward Voltage
D High Radiant Power and Radiant Intensity
D Suitable for DC and High Pulse Current Operation
D High Reliability
D Standard T–1 3/4 (5mm) Package
Applications:
Infrared remote control and free air transmission systems with low forward voltage and comfortable radiation and angle requirements in combination with PIN photodiodes or phototransistors.
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Reverse Voltage, V
Forward Current, I
R
F
Continuous 150mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Note 1) 300mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Surge Forward Current (Note 2), I
Power Dissipation, P
Junction Temperature, T
D
J
Operating Temperature Range, T
Storage Temperature Range, T
Lead Soldering Temperature (t ≤ 5sec, 2mm from case), T
Thermal Resistance, Junction–to–Ambient, R
FSM
opr
stg
L
thJA
Note 1. tp = 100µs, tp/T = 0.5
Note 2. tp = 100µs
5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
210mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+100°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +100°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +100°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+260°C. . . . . . . . . . . . . . . . . . . . . . . . . . .
375K/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TA = +25°C unless otherwis specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Forward Voltage V
IF = 100mA, tp = 20ms – 1.3 1.7 V
F
IF = 1.5A, tp = 100µs – 2.2 3.4 V
Temperature Coefficient of Forward Voltage IF = 100mA – –1.3 – mV/°C
Reverse Current I
Junction Capacitance C
Radient Intensity I
VR = 5V – – 100 µA
R
VR = 0, f = 1MHz, E = 0 – 30 – pF
j
IF = 100mA, tp = 20ms 7 14 – mW/sr
e
IF = 1.5A, tp = 100µs 60 140 – mW/sr
Angle of Half Intensity Φ – ±22 – deg
Radient Power Φ
IF = 100mA, tp = 20ms – 13 – mW
e
Temperature Coefficient of Radient Intensity IF = 20mA – –0.8 – %/°C
Peak Wavelength λ
IF = 100mA – 950 – nm
p
Temperature Coefficient of Peak Wavelength IF = 100mA – 0.2 – nm/°C
Spectral Bandwidth ∆λ IF = 100mA – 50 – nm
Rise Time t
IF = 100mA – 800 – ns
r
IF = 1.5A – 400 – ns
Fall Time t
IF = 100mA – 800 – ns
f
IF = 1.5A – 400 – ns
.200 (5.08) Dia
.340
(8.63)
.100 (2.54)
.050 (1.27) Typ
.230
(5.84)
Dia
.040
(1.01)
.750
(19.05)
Min
Flat Denotes
Cathode
.100 (2.54)
.100 (2.54) R
Seating Plane
.025 (0.63) Max Sq
.050 (1.27)
.100 (2.54)
Tolerance ±.010 (.254)
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