NTE NTE299 Datasheet
NTE299
Silicon NPN Transistor
RF Power Amp, Driver
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
C
Power Dissipation (T
Operating Junction Temperature, T
Storage Temperatur Range, T
Thermal Resistance, Junction–to–Case, R
CBO
CEO
EBO
= +25°C), P
C
stg
C
J
thJC
75V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
35V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
25°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
(TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector–Base Breakdown Voltage V
Collector–Emitter Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Collector Cutoff Current I
DC Current Gain h
Power Output P
.500
(12.7)
1.200
(30.48)
Ref
.300
(7.62)
(BR)CBOIC
(BR)CEOIC
(BR)EBOIE
CBO
FE
O
C
= 1mA, IE = 0 75 – – V
= 10mA, RBE = ∞ 35 – – V
= 1mA, IC = 0 4 – – V
VCB = 30V, IE = 0 – – 10 µA
VCE = 10V, IC = 0.1A 10 70 300
VCC = 12V, f = 27MHz, PIN = 75mW,
I
< 166mA
C
.380 (9.56) .180 (4.57)
.132 (3.35) Dia
.325
(9.52)
.070 (1.78) x 45°
1.2 1.4 – W
Chamf
.050 (1.27)
.400
(10.16)
Min
CBE
.100 (2.54) .100 (2.54)
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