NTE NTE2988 Datasheet

NTE2988
MOSFET

N–Channel, Enhancement Mode

High Speed Switch

Description:

The NTE2988 is an N–Channel, enhancement mode, power field effect transistor in a TO52 type
package d esigned e specially f or l ow p ower i nverters, i nterface t o C MOS a nd T TL l ogic, a nd l ine d riv ers.

Features:

D High Input Impedance
D Extremely Fast Switching
D Rugged–Dissipation Limited SOA
D Internal Drain–Source Diode

Benefits:

D Reduced Component Count
D Simpler Designs – Directly Interfaces CMOS & TTL
D Improved Circuit Performance
D Increased Reliability

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)

Drain–Source Voltage 60V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Drain–Gate Voltage 60V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak Gate Current 100mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Gate–Source Voltage +15V, –0.3V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Drain Current

Continuous (Note 1) ±0.2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Pulsed (Note 2) ±1.0A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Maximum Dissipation (TC = +25°C) 315mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Linear Derating Factor 2.5mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Temperature Range, T
Storage Temperature Range, T
Lead Temperature (During Soldering, 1/16” from case, 10sec), T

Note 1. Limited by package dissipation.
Note 2. Pulse test – 80µs to 300µs, 1% duty cycle.

opr

stg

L

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+300°C. . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics: (TC = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Static Characteristics

Drain–Source Breakdown Voltage BV
Gate Threshold Voltage V
Gate–Body Leakage I
Zero Gate Voltage Drain Current I
On–State Drain Current I

Static–Drain–Source On–State

r

DS(on)

Resistance

Dynamic Characteristics

Forward Transconductance g
Input Capacitance C
Reverse Transfer Capacitance C
Common Source Output Capacitance C
Turn–On Time t
Turn–Off Time t

Drain–Source Diode Characteristics

Forward ON Voltage V
Reverse Recovery Time t

DSSID

GS(th)

GSS
DSS

D(on)

fs
iss
rss

oss

ON

OFF

SD

rr

= 1000µA, VGS = 0 60 – – V
VDS = VGS, ID = 1mA 0.8 – 2.5 V
VGS = 15V, VDS = 0 – – 100 nA
VDS = 50V, VGS = 0 – – 10 µA
VGS = 5V, ID = 0.2A, Note 2 – – 1.5 V
VGS = 10V, ID = 0.5A, Note 2 – – 2.5 V
VGS = 5V, ID = 0.2A, Note 2 – – 7.5 Ω
VGS = 10V, ID = 0.5A, Note 2 – – 5.0 Ω

VDS = 15V, ID = 0.5A, Note 2 200 – – mS
VDS = 25V, f = 1MHz – – 60 pF

– – 5 pF
– – 25 pF

VDD = 15V, RL = 23Ω, Rg = 25Ω,
ID = 0.6A

– – 10 ns
– – 10 ns

IS = –0.5A, VGS = 0, Note 2 – –0.85 – V
VGS = 0, IF = IR = 0.5A – 160 – ns

Note 2. Pulse test – 80µs to 300µs, 1% duty cycle.

.150 (3.81)

Max

.500 (12.7)

Min

Source

45°

.230 (5.84) Dia Max
195 (4.95) Dia Max

.019 (0.5) Dia

Gate
Drain/Case

.040 (1.01)