NTE NTE2987 Datasheet

NTE2987

Logic Level MOSFET

N–Channel, Enhancement Mode

High Speed Switch

Features:

D Avalanche Rugged Technology
D Logic Level Gate Drive
D R
D +175°C Operating Temperature
D Fast Switching
D Low Gate Charge
D High Current Capability

Absolute Maximum Ratings:

Drain Current, I

Total Power Dissipation (T
Gate–Source Voltage, V

Avalanche Current, Repetitive or Non–Repetitive (Note 2), I
Single Pulsed Avalanche Energy (Note 3), E
Repetitive Avalanche Energy (Note 2), E
Avalanche Current, Repetitive or Non–Repetitive (Note 4), I
Drain–Source Voltage (V
Drain–Gate Voltage (R
Operating Junction Temperature, T
Storage Temperature Range, T
Maximum Lead Temperature (During Soldering, 1.6mm from case, 10sec), T
Thermal Resistance:

Note 1. Pulse width limited by safe operating area.
Note 2. Pulse width limited by T
Note 3. V
Note 4. T

(on) = 0.09Ω Typ. at VGS = 5V

DS

D

Continuous

TC = +25°C 20A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

T

= +100°C 14A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

C

Pulsed (Note 1) 80A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

= +25°C), P

C

D

Derate Above 25°C 0.7W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

GS

AR

AS

AR

AR

= 0), V

GS

= 20kΩ), V

GS

Maximum Junction–to–Case, R

DS

DGR

J

stg

thJC

Typical Case–to–Sink (Mounting surface flat, smooth, and greased), R
Maximum Junction–to–Ambient (Free Air Operation), R

max, Duty Cycle < 1%.

J

= 25V, ID = IAR, Starting TJ = +175°C.

DD

= +100°C, Pulse width limited by TJ max, Duty Cycle < 1%.

C

thJA

L

thCS

105W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

±15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

20A. . . . . . . . . . . . . . . . . . . . . . . . . . .

120mJ. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

30mJ. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

14A. . . . . . . . . . . . . . . . . . . . . . . . . . .

100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+175°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65° to +175°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+300°C. . . . . . . . . .

1.43°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.5°C/W. . . . . .

62.5°C/W. . . . . . . . . . . . . . . . . . .

Electrical Characteristics: (TC = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

OFF

Drain–Source Breakdown Voltage BV
Drain–to–Source Leakage Current I

DSS

DSS

VGS = 0v, ID = 250µA 100 – – V
VDS = 100V, VGS = 0 – – 1 µA

VDS = 80V, VGS = 0V, , TC = +150°C – – 10 µA
Gate–Source Leakage Forward I
Gate–Source Leakage Reverse I

GSS
GSS

VGS = 15V – – 100 nA

VGS = –15V – – –100 nA
ON (Note 5)
Gate Threshold Voltage V
Static Drain–Source ON Resistance R
On–State Drain Current

GS(th)
DS(on)

I

D(on)

VDS = VGS, ID = 250µA 1.0 1.6 2.5 V

VGS = 5V, ID = 10A – 0.09 0.12 Ω

VDS > I

Dynamic

Forward Transconductance g

fs

VDS > I

Note 5
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

iss

oss

rss

VGS = 0V, VDS = 25V, f = 1MHz – 1200 1500 pF

Switching

Total Gate Charge Q
Gate–Source Charge Q
Gate–Drain (“Miller”) Charge Q
Turn–On Delay Time t

d(on)

Rise Time t
Turn–Off Delay Time t

d(off)

Fall Time t

gs
gd

r

f

VGS = 5V, ID = 20A, VDD = 80V

g

VDD = 30V

VGS = 5V

VDD = 80V

VGS = 5V

Source–Drain Diode Ratings and Characteristics

x R

D(on)

D(on)

DS(on)

x R

DS(on)

ID = 10A, RG = 50Ω,

,

ID = 20A, RG = 50Ω,

,

max, VGS = 10V

max, ID = 10A,

20 – – A

10 16 – mhos

– 250 350 pF
– 60 90 pF

– 22 30 nC
– 6 – nC
– 12 – nC
– 50 70 ns
– 140 200 ns
– 80 110 ns
– 80 110 ns

Continuous Source Current I
Pulse Source Current I
Diode Forward Voltage V
Reverse Recovery Time t
Reverse Recovery Charge Q
Reverse Recovery Current

I

RRM

S

SM

SD

rr

(Body Diode) – – 20 A

(Body Diode) Note 1 – – 80 A

ISD = 20A, VGS = 0V, Note 5 – – 1.5 V

TJ = +150°C, VDD = 50V, ISD = 20A,

di/dt = 100A/µs

rr

Note 1. Pulse width limited by safe operating area.
Note 5. Pulse Test: Pulse Width = 300µs, Duty Cycle = 1.5%.

– 130 – ns
– 0.4 – µC

– 6 – A