NTE NTE2986 Datasheet
NTE2986
Logic Level MOSFET
N–Channel, Enhancement Mode
High Speed Switch
Features:
D Dynamic dv/dt Rating
D Logic Level Gate Drive
D R
D +175°C Operating Temperature
D Fast Switching
D Ease of Paralleling
D Simple Drive Requirements
Absolute Maximum Ratings:
Drain Current, I
Total Power Dissipation (T
Gate–Source Voltage, V
Single Pulsed Avalanche Energy (Note 2), E
Peak Diode Recovery dv/dt (Note 3), dv/dt 4.5V/ns. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
Storage Temperature Range, T
Maximum Lead Temperature (During Soldering, 1.6mm from case, 10sec), T
Mounting Torque, 6–32 or M3 Screw 10 lbf•in (1.1 N•m). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance:
(on) Specified at VGS = 4V & 5V
DS
D
Continuous (VGS = 5V)
TC = +25°C 50A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
= +100°C 36A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
Pulsed (Note 1) 200A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25°C), P
C
D
Derate Above 25°C 1.0W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GS
AS
J
stg
Maximum Junction–to–Case, R
thJC
Typical Case–to–Sink (Mounting surface flat, smooth, and greased), R
Maximum Junction–to–Ambient (Free Air Operation), R
thJA
L
thCS
–55° to +175°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +175°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
150W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
110mJ. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+300°C. . . . . . . . . .
1.0K/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.5K/W. . . . . . .
62K/W. . . . . . . . . . . . . . . . . . . . .
Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 2. L = 179µH, V
Note 3. I
≤ 51A, di/dt ≤ 250A/µs, VDD ≤ V
SD
= 25V, RG = 25Ω, IAS = 51A, Starting TJ = +175°C.
DD
(BR)DSS
, TJ ≤ +175°C.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Drain–Source Breakdown Voltage BV
Breakdown Voltage Temperature
∆V
(BR)DSS
Coefficient
Static Drain–Source ON Resistance R
DSS
∆T
DS(on)
VGS = 0v, ID = 250µA 60 – – V
/
Reference to +25°C, ID = 1mA
J
VGS = 5V, ID = 31A, Note 4 – – 0.028 Ω
VGS = 4V, ID = 25A, Note 4 – – 0.039 Ω
Gate Threshold Voltage V
GS(th)
Forward Transconductance g
Drain–to–Source Leakage Current I
fs
DSS
VDS = VGS, ID = 250µA 1.0 – 2.0 V
VDS ≥ 25V, ID = 31A, Note 4 23 – – mhos
VDS = 60V, VGS = 0 – – 25 µA
VDS = 48V, VGS = 0V, , TC = +150°C – – 250 µA
Gate–Source Leakage Forward I
Gate–Source Leakage Reverse I
GSS
GSS
Total Gate Charge Q
Gate–Source Charge Q
Gate–Drain (“Miller”) Charge Q
Turn–On Delay Time t
d(on)
Rise Time t
Turn–Off Delay Time t
d(off)
Fall Time t
Internal Drain Inductance L
Internal Source Inductance L
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
gs
gd
r
f
D
S
iss
oss
rss
VGS = 10V – – 100 nA
VGS = –10V – – –100 nA
VGS = 5V, ID = 51A, VDS = 48V
g
VDD = 30V
RD = 0.56Ω
Between lead, 6mm (0.25”) from
package and center of die contact
VGS = 0V, VDS = 25V, f = 1MHz – 3300 – pF
Source–Drain Diode Ratings and Characteristics
ID = 51A, RG = 4.6Ω,
,
– 0.07 – V/°C
– – 66 nC
– – 12 nC
– – 43 nC
– 17 – ns
– 230 – ns
– 42 – ns
– 110 – ns
– 4.5 – nH
– 7.5 – nH
– 1200 – pF
– 200 – pF
Continuous Source Current I
Pulse Source Current I
Diode Forward Voltage V
Reverse Recovery Time t
Reverse Recovery Charge Q
Forward Turn–On Time t
S
SM
SD
rr
on
(Body Diode) – – 50 A
(Body Diode) Note 1 – – 200 A
TJ = +25°C, IS = 51A, VGS = 0V, Note 4 – – 2.5 V
TJ = +25°C, IF = 51A, di/dt = 100A/µs,
Note 4
rr
– 130 180 ns
– 0.84 1.3 µC
Intrinsic turn–on time is neglegible
(turn–on is dominated by L
+ LD)
S
Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 4. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
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