NTE NTE2985 Datasheet

NTE2985

Logic Level MOSFET

N–Channel, Enhancement Mode

High Speed Switch

Features:

D Dynamic dv/dt Rating
D Logic Level Gate Drive
D R
D +175°C Operating Temperature
D Fast Switching
D Ease of Paralleling
D Simple Drive Requirements

Absolute Maximum Ratings:

Drain Current, I

Total Power Dissipation (T
Gate–Source Voltage, V

Single Pulsed Avalanche Energy (Note 2), E

Peak Diode Recovery dv/dt (Note 3), dv/dt 4.5V/ns. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature Range, T
Storage Temperature Range, T
Maximum Lead Temperature (During Soldering, 1.6mm from case, 10sec), T

Mounting Torque, 6–32 or M3 Screw 10 lbf•in (1.1 N•m). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Thermal Resistance:

(on) Specified at VGS = 4V & 5V

DS

D

Continuous (VGS = 5V)

TC = +25°C 30A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

T

= +100°C 21A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

C

Pulsed (Note 1) 110A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

= +25°C), P

C

D

Derate Above 25°C 0.59W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

GS

AS

J

stg

Maximum Junction–to–Case, R

thJC

Typical Case–to–Sink (Mounting surface flat, smooth, and greased), R
Maximum Junction–to–Ambient (Free Air Operation), R

thJA

L

thCS

–55° to +175°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +175°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

88W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

±10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

220mJ. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+300°C. . . . . . . . . .

1.7K/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.5K/W. . . . . . .

62K/W. . . . . . . . . . . . . . . . . . . . .

Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 2. L = 285µH, V
Note 3. I

≤ 30A, di/dt ≤ 200A/µs, VDD ≤ V

SD

= 25V, RG = 25Ω, Starting TJ = +175°C, IAS = 30A.

DD

(BR)DSS

, TJ ≤ +175°C.

Electrical Characteristics: (TC = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Drain–Source Breakdown Voltage BV
Breakdown Voltage Temperature

∆V

(BR)DSS

Coefficient

Static Drain–Source ON Resistance R

DSS

∆T

DS(on)

VGS = 0V, ID = 250µA 60 – – V

/

Reference to +25°C, ID = 1mA

J

VGS = 5V, ID = 18A, Note 4 – – 0.05 Ω
VGS = 4V, ID = 15A, Note 4 – – 0.07 Ω

Gate Threshold Voltage V

GS(th)

Forward Transconductance g
Drain–to–Source Leakage Current I

fs

DSS

VDS = VGS, ID = 250µA 1.0 – 2.0 V
VDS ≥ 25V, ID = 18A, Note 4 12 – – mhos
VDS = 60V, VGS = 0 – – 25 µA

VDS = 48V, VGS = 0V, , TC = +150°C – – 250 µA
Gate–Source Leakage Forward I
Gate–Source Leakage Reverse I

GSS
GSS

Total Gate Charge Q
Gate–Source Charge Q
Gate–Drain (“Miller”) Charge Q
Turn–On Delay Time t

d(on)

Rise Time t
Turn–Off Delay Time t

d(off)

Fall Time t
Internal Drain Inductance L
Internal Source Inductance L
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

gs
gd

r

f
D
S

iss

oss

rss

VGS = 10V – – 100 nA

VGS = –10V – – –100 nA

VGS = 5V, ID = 30A, VDS = 48V

g

VDD = 30V

RD = 1.0Ω

Between lead, 6mm (0.25”) from

package and center of die contact

VGS = 0V, VDS = 25V, f = 1MHz – 1600 – pF

Source–Drain Diode Ratings and Characteristics

ID = 30A, RG = 6.0Ω,

,

– 0.07 – V/°C

– – 35 nC
– – 7.1 nC
– – 25 nC
– 14 – ns
– 170 – ns
– 30 – ns
– 56 – ns
– 4.5 – nH
– 7.5 – nH

– 660 – pF
– 170 – pF

Continuous Source Current I
Pulse Source Current I
Diode Forward Voltage V
Reverse Recovery Time t
Reverse Recovery Charge Q
Forward Turn–On Time t

S

SM

SD

rr

on

(Body Diode) – – 30 A

(Body Diode) Note 1 – – 110 A

TJ = +25°C, IS = 30A, VGS = 0V, Note 4 – – 1.6 V

TJ = +25°C, IF = 30A, di/dt = 100A/µs,

Note 4

rr

– 120 180 ns
– 0.7 1.3 µC

Intrinsic turn–on time is neglegible

(turn–on is dominated by L

+ LD)

S

Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 4. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.