NTE NTE2984 Datasheet

NTE2984

Logic Level MOSFET

N–Channel, Enhancement Mode

High Speed Switch

Features:

D Dynamic dv/dt Rating
D Logic Level Gate Drive
D RDS(on) Specified at VGS = 4V & 5V
D +175°C Operating Temperature
D Fast Switching
D Ease of Paralleling
D Simple Drive Requirements

Absolute Maximum Ratings:

Drain Current, I

Continuous (VGS = 5V)

Pulsed (Note 1) 68A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Total Power Dissipation (TC = +25°C), P

Derate Above 25°C 0.40W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Gate–Source Voltage, V
Single Pulsed Avalanche Energy (Note 2), E

Peak Diode Recovery dv/dt (Note 3), dv/dt 4.5V/ns. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature Range, T
Storage Temperature Range, T
Maximum Lead Temperature (During Soldering, 1.6mm from case, 10sec), T

Mounting Torque, 6–32 or M3 Screw 10 lbf•in (1.1 N•m). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Thermal Resistance:

Maximum Junction–to–Case, R

Typical Case–to–Sink (Mounting surface flat, smooth, and greased), R

Maximum Junction–to–Ambient (Free Air Operation), R

D

TC = +25°C 17A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

TC = +100°C 12A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

D

GS

AS

J

stg

L

thJC

thJA

–55° to +175°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +175°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

thCS

60W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

±10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

110mJ. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+300°C. . . . . . . . . .

2.5K/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.5K/W. . . . . . .

62K/W. . . . . . . . . . . . . . . . . . . . .

Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 2. L = 444µH, VDD = 25V, RG = 25Ω, Starting TJ = +175°C.
Note 3. ISD ≤ 17A, di/dt ≤ 140A/µs, VDD ≤ V

(BR)DSS

, TJ ≤ +175°C.

Electrical Characteristics: (TC = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Drain–Source Breakdown Voltage BV
Breakdown Voltage Temperature

Coefficient

Static Drain–Source ON Resistance R

Gate Threshold Voltage V
Forward Transconductance g
Drain–to–Source Leakage Current I

Gate–Source Leakage Forward I
Gate–Source Leakage Reverse I
Total Gate Charge Q
Gate–Source Charge Q
Gate–Drain (“Miller”) Charge Q
Turn–On Delay Time t
Rise Time t
Turn–Off Delay Time t
Fall Time t
Internal Drain Inductance L
Internal Source Inductance L
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

∆V

DSS

(BR)DSS

∆T

J

DS(on)

GS(th)

fs

DSS

GSS
GSS

g
gs
gd

d(on)

r

d(off)

f
D
S

iss

oss

rss

/

Source–Drain Diode Ratings and Characteristics

VGS = 0V, ID = 250µA 60 – – V
Reference to +25°C, ID = 1mA

– 0.06 – V/°C

VGS = 5V, ID = 10A, Note 4 – – 0.10 Ω
VGS = 5V, ID = 8.5A, Note 4 – – 0.14 Ω
VDS = VGS, ID = 250µA 1.0 – 2.0 V
VDS ≥ 25V, ID = 10A, Note 4 7.3 – – mhos
VDS = 60V, VGS = 0 – – 25 µA
VDS = 48V, VGS = 0V, TC = +1 50°C – – 250 µA
VGS = 10V – – 100 nA
VGS = –10V – – –100 nA
VGS = 5V, ID = 17A, VDS = 48V

– – 18 nC
– – 4.5 nC
– – 12 nC

VDD = 30V
RD = 1.7Ω

= 17A, RG = 9.0Ω,

, ID

– 11 – ns
– 110 – ns
– 23 – ns
– 41 – ns

Between lead, 6mm (0.25”) from
package and center of die contact

– 4.5 – nH
– 7.5 – nH

VGS = 0V, VDS = 25V, f = 1MHz – 870 – pF

– 360 – pF
– 53 – pF

Continuous Source Current I
Pulse Source Current I
Diode Forward Voltage V
Reverse Recovery Time t
Reverse Recovery Charge Q
Forward Turn–On Time t

S

SM

SD

rr

on

(Body Diode) – – 17 A
(Body Diode) Note 1 – – 68 A
TJ = +25°C, IS = 17A, VGS = 0V, Note 4 – – 1.5 V
TJ = +25°C, IF = 17A, di/dt = 100A/µs,

Note 4

rr

– 110 260 ns
– 0.49 1.5 µC

Intrinsic turn–on time is neglegible
(turn–on is dominated by LS + LD)

Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 4. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.