NTE NTE2981 Datasheet
NTE2981
Logic Level MOSFET
N–Channel, Enhancement Mode
High Speed Switch
Features:
D Dynamic dv/dt Rating
D Repetitive Avalanche rated
D Logic Level Gate Drive
D RDS(on) Specified at VGS = 4V & 5V
Absolute Maximum Ratings:
Drain Current, I
Continuous (VGS = 5V)
Pulsed (Note 1) 31A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (TC = +25°C), P
Derate Above 25°C 0.33W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (PC Board Mount, TC = +25°C, Note 2), P
Derate Above 25°C 0.02W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate–Source Voltage, V
Single Pulsed Avalanche Energy (Note 3), E
Avalanche Current (Note 1), I
Repetitive Avalanche Energy (Note 1), E
Peak Diode Recovery dv/dt (Note 4), dv/dt 5.5V/ns. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
Storage Temperature Range, T
Maximum Lead Temperature (During Soldering, 1.6mm from case, 10sec), T
Maximum Thermal Resistance:
Junction–to–Case, R
Junction–to–Ambient (PCB Mount, Note 2), R
Junction–to–Ambient, R
D
TC = +25°C 7.7A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TC = +100°C 4.9A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
D
GS
AS
AR
AR
J
stg
L
thJC
thJA
thJA
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
42W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.5W. . . . . . . . . . . . . . . . . . . . .
±10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
210mJ. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7.7A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4.2mJ. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+260°C. . . . . . . . . .
3.0°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
50°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
110°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 2. When mounted on a 1” square PCB (FR–4 or G–10 material).
Note 3. L = 5.3mH, VDD = 25V, RG = 25Ω, Starting TJ = +25°C, IAS = 7.7A.
Note 4. ISD ≤ 9.2A, di/dt ≤ 110A/ µs, VDD ≤ V
(BR)DSS
, TJ ≤ +150°C.
Electrical Characteristics: (TJ = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Drain–Source Breakdown Voltage BV
Breakdown Voltage Temperature
Coefficient
Static Drain–Source ON Resistance R
Gate Threshold Voltage V
Forward Transconductance g
Drain–to–Source Leakage Current I
Gate–Source Leakage Forward I
Gate–Source Leakage Reverse I
Total Gate Charge Q
Gate–Source Charge Q
Gate–Drain (“Miller”) Charge Q
Turn–On Delay Time t
Rise Time t
Turn–Off Delay Time t
Fall Time t
Internal Drain Inductance L
Internal Source Inductance L
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
∆V
DSS
(BR)DSS
∆T
J
DS(on)
GS(th)
fs
DSS
GSS
GSS
g
gs
gd
d(on)
r
d(off)
f
D
S
iss
oss
rss
/
Source–Drain Diode Ratings and Characteristics
VGS = 0V, ID = 250µA 100 – – V
Reference to +25°C, ID = 1mA
– 0.13 – V/°C
VGS = 5V, ID = 4.6A, Note 5 – – 0.27 Ω
VGS = 4V, ID = 3.9A, Note 4 – – 0.38 Ω
VDS = VGS, ID = 250µA 1.0 – 2.0 V
VDS = 50V, ID = 4.6A, Note 5 4.4 – – mhos
VDS = 100V, VGS = 0 – – 25 µA
VDS = 80V, VGS = 0V, TC = +1 25°C – – 250 µA
VGS = 10V – – 100 nA
VGS = –10V – – –100 nA
VGS = 5V, ID = 9.2A, VDS = 80V, Note 5
– – 12 nC
– – 3.0 nC
– – 7.1 nC
VDD = 50V
= 9.2A, RG = 9.0Ω,
, ID
RD = 5.2Ω, Note 5
– 9.8 – ns
– 64 – ns
– 21 – ns
– 27 – ns
Between lead, 6mm (0.25”) from
package and center of die contact
– 4.5 – nH
– 7.5 – nH
VGS = 0V, VDS = 25V, f = 1MHz – 490 – pF
– 150 – pF
– 30 – pF
Continuous Source Current I
Pulse Source Current I
Diode Forward Voltage V
Reverse Recovery Time t
Reverse Recovery Charge Q
Forward Turn–On Time t
S
SM
SD
rr
on
(Body Diode) – – 7.7 A
(Body Diode) Note 1 – – 31 A
TJ = +25°C, IS = 7.7A, VGS = 0V, Note 5 – – 2.5 V
TJ = +25°C, IF = 9.2A, di/dt = 100A/µs,
Note 5
rr
– 110 140 ns
– 0.8 1.0 µC
Intrinsic turn–on time is neglegible
(turn–on is dominated by LS + LD)
Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 5. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
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