NTE NTE2981 Datasheet

NTE2981

Logic Level MOSFET

N–Channel, Enhancement Mode

High Speed Switch

Features:

D Dynamic dv/dt Rating
D Repetitive Avalanche rated
D Logic Level Gate Drive
D RDS(on) Specified at VGS = 4V & 5V

Absolute Maximum Ratings:

Drain Current, I

Continuous (VGS = 5V)

Pulsed (Note 1) 31A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Total Power Dissipation (TC = +25°C), P

Derate Above 25°C 0.33W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Total Power Dissipation (PC Board Mount, TC = +25°C, Note 2), P

Derate Above 25°C 0.02W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Gate–Source Voltage, V
Single Pulsed Avalanche Energy (Note 3), E
Avalanche Current (Note 1), I
Repetitive Avalanche Energy (Note 1), E

Peak Diode Recovery dv/dt (Note 4), dv/dt 5.5V/ns. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature Range, T
Storage Temperature Range, T
Maximum Lead Temperature (During Soldering, 1.6mm from case, 10sec), T
Maximum Thermal Resistance:

Junction–to–Case, R

Junction–to–Ambient (PCB Mount, Note 2), R

Junction–to–Ambient, R

D

TC = +25°C 7.7A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

TC = +100°C 4.9A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

D

D

GS

AS

AR

AR

J

stg

L

thJC

thJA

thJA

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

42W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

2.5W. . . . . . . . . . . . . . . . . . . . .

±10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

210mJ. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

7.7A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

4.2mJ. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+260°C. . . . . . . . . .

3.0°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

50°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . .

110°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 2. When mounted on a 1” square PCB (FR–4 or G–10 material).
Note 3. L = 5.3mH, VDD = 25V, RG = 25Ω, Starting TJ = +25°C, IAS = 7.7A.
Note 4. ISD ≤ 9.2A, di/dt ≤ 110A/ µs, VDD ≤ V

(BR)DSS

, TJ ≤ +150°C.

Electrical Characteristics: (TJ = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Drain–Source Breakdown Voltage BV
Breakdown Voltage Temperature

Coefficient

Static Drain–Source ON Resistance R

Gate Threshold Voltage V
Forward Transconductance g
Drain–to–Source Leakage Current I

Gate–Source Leakage Forward I
Gate–Source Leakage Reverse I
Total Gate Charge Q
Gate–Source Charge Q
Gate–Drain (“Miller”) Charge Q
Turn–On Delay Time t
Rise Time t
Turn–Off Delay Time t
Fall Time t
Internal Drain Inductance L
Internal Source Inductance L
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

∆V

DSS

(BR)DSS

∆T

J

DS(on)

GS(th)

fs

DSS

GSS
GSS

g
gs
gd

d(on)

r

d(off)

f
D
S

iss

oss

rss

/

Source–Drain Diode Ratings and Characteristics

VGS = 0V, ID = 250µA 100 – – V
Reference to +25°C, ID = 1mA

– 0.13 – V/°C

VGS = 5V, ID = 4.6A, Note 5 – – 0.27 Ω
VGS = 4V, ID = 3.9A, Note 4 – – 0.38 Ω
VDS = VGS, ID = 250µA 1.0 – 2.0 V
VDS = 50V, ID = 4.6A, Note 5 4.4 – – mhos
VDS = 100V, VGS = 0 – – 25 µA
VDS = 80V, VGS = 0V, TC = +1 25°C – – 250 µA
VGS = 10V – – 100 nA
VGS = –10V – – –100 nA
VGS = 5V, ID = 9.2A, VDS = 80V, Note 5

– – 12 nC
– – 3.0 nC
– – 7.1 nC

VDD = 50V

= 9.2A, RG = 9.0Ω,

, ID

RD = 5.2Ω, Note 5

– 9.8 – ns
– 64 – ns
– 21 – ns
– 27 – ns

Between lead, 6mm (0.25”) from
package and center of die contact

– 4.5 – nH
– 7.5 – nH

VGS = 0V, VDS = 25V, f = 1MHz – 490 – pF

– 150 – pF
– 30 – pF

Continuous Source Current I
Pulse Source Current I
Diode Forward Voltage V
Reverse Recovery Time t
Reverse Recovery Charge Q
Forward Turn–On Time t

S

SM

SD

rr

on

(Body Diode) – – 7.7 A
(Body Diode) Note 1 – – 31 A
TJ = +25°C, IS = 7.7A, VGS = 0V, Note 5 – – 2.5 V
TJ = +25°C, IF = 9.2A, di/dt = 100A/µs,

Note 5

rr

– 110 140 ns
– 0.8 1.0 µC

Intrinsic turn–on time is neglegible

(turn–on is dominated by LS + LD)

Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 5. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.