NTE NTE2976 Datasheet

NTE2976
MOSFET

N–Channel, Enhancement Mode

High Speed Switch

Features:

D Low Input Capacitance
D Low Static R
D Fast Switching Time
D Guaranteed Avalanche Resistance

Applications:

D Switching Power Supply of AC 240V Input
D High Voltage Power Supply
D Inverter

Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Drain–Source Voltage, V

Gate–Source Voltage, V
Drain Current, I

Continuous DC 6A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak (Pulse Width ≤ 10µs, Duty Cycle ≤ 1/100) 18A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Continuous DC Source Current, I
Total Power Dissipation, P
Repetitive Avalanche Current (Tch = +150°C), I
Single Avalanche Energy (Tch = +25°C), E
Repetitive Avalanche Energy (Tch = +25°C), E
Operating Channel Temperature, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Dielectric Strength (Terminals–to–Case, AC, 1 minute), V
Mounting Torque, TOR

Maximum 0.5N•m. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Recommended 0.3N•m. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

DS(on)

DSS

GSS

D

S

T

AR

AS

AR

ch

stg

thJC

dis

700V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

±30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

6A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

50W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

6A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

190mJ. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

19mJ. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

2.5°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

2kV. . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics: (TC = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Drain–Source Breakdown Voltage V
Zero Gate Voltage Drain Current I
Gate–Source Leakage Current I
Forward Transconductance g
Static Drain–Source On–State Resistance R
Gate Threshold Voltage V
Source–Drain Diode Forward Voltage V
Total Gate Charge Q
Input Capacitance C
Reverse Transfer Capacitance C
Output Capacitance C
Turn–On Time t
Turn–Off Time t

(BR)DSSID

DSS
GSS

DS(on)ID

.402 (10.2) Max

.224 (5.7) Max

TH
SD

iss

rss

oss
on
off

= 1mA, VGS = 0V 700 – – V
VDS = 700V, VGS = 0V – – 250 µA
VGS = ±30V, VDS = 0V – – ±0.1 µA
ID = 3A, VDS = 10V 3 5 – S

fs

= 3A, VGS = 10V – 1.5 2.0 Ω
ID = 1mA, VDS = 10V 2.5 3.0 3.5 V
IS = 3A, VGS = 0V – – 1.5 V
VDD = 400V, VGS = 10V, ID = 6A – 35 – nC

g

VDS = 10V, VGS = 0V, f = 1MHz – 1250 – pF

– 250 – pF
– 530 – pF

ID = 3A, RL = 50Ω, VGS = 10V – 60 110 ns

– 160 250 ns

.173 (4.4)

Max

.114 (2.9)

.122 (3.1)

Max

Dia

.295
(7.5)

.669

(17.0)

Max

GDS

.531

(13.5)

Min

.100 (2.54) .059 (1.5) Max

.165

(4.2)