NTE NTE2975 Datasheet

NTE2975
MOSFET

N–Channel, Enhancement Mode

High Speed Switch

Features:

D Advanced Process Technology
D Ultra Low On–State Resistance
D Dynamic dv/dt Rating
D +175°C Operating Temperature
D Fast Switching
D Fully Avalanche Rated

Absolute Maximum Ratings:

Drain Current, I

Continuous (VGS = 10V)

Pulse (Note 2) 180A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Power Dissipation (TC = +25°C), P

Derate above +25°C 0.71W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Gate–Source Voltage, V
Avalanche Current (Note 2), I
Repetitive Avalanche Energy (Note 2), E
Single Pulse Avalanche Energy (Note 3, Note 4), E

Peak Diode Recovery (Note 5), dv/dt 5.0V/ns. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature Range, T
Storage Temperature Range, T
Lead Temperature (During Soldering, 1.6mm from case, 10sec max), T
Maximum Thermal Resistance, Junction–to–Case, R
Typical Thermal Resistance, Case–to–Sink (Flat, greased surface), R
Maximum Thermal Resistance, Junction–to–Ambient, R

D

TC = +25°C (Note 1) 53A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

TC = +100°C 37A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

D

GS

AR

AR

AS

J

stg

L

thJC

thCS

thJA

–55° to +175°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +175°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

107W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

±20V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

28A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

11mJ. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

152mJ. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+300°C. . . . . . . . . . . . . . .

1.4°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.5°C/W. . . . . . . . . . . . .

62°C/W. . . . . . . . . . . . . . . . . . . . . . . . . .

Note 1. Calculated continuous current based on maximum allowable junction temperature. Package

limitation current is 39A.
Note 2. Repetitive rating; pulse width limited by maximum junction temperature.
Note 3. Starting TJ = +25°C, L = 389µH, RG = 25Ω, IAS = 28A.
Note 4. This is a calculated value limited to TJ = +175°C.
Note 5. ISD ≤ 28A, di/dt ≤ 220A/µs, VDD ≤ V

(BR)DSS

, TJ ≤ +175°C

Electrical Characteristics: (TJ = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Drain–Source Breakdown Voltage V
Breakdown Voltage Temperature

Coefficient

Static Drain–Source On–Resistance R
Gate Threshold Voltage V

(BR)DSSVGS

∆V

(BR)DSS

∆T

DS(on)
GS(th)

Forward Transconductance g
Drain–Source Leakage Current I

Gate–Source Forward Leakage Current I

Total Gate Charge Q
Gate–Source Charge Q
Gate–Drain (“Miller”) Charge Q
Turn–On Delay Time t
Rise Time t
Turn–Off Delay Time t
Fall Time t
Internal Drain Inductance L
Internal Source Inductance L
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

Source–Drain Ratings and Characteristics

fs

DSS

GSS

G
GS
GD

d(on)

r

d(off)

f
D
S

iss
oss
rss

= 0V, ID = 250µA 55 – – V

Reference to +25°C, ID = 1mA – 0.057 – V/°C

J

VGS = 10V, ID = 28A, Note 6 – – 16.5 mΩ
VDS = VGS, ID = 250µA 2.0 – 4.0 V
VDS = 25V, ID = 28A, Note 6 19 – – S
VDS = 55V, VGS = 0 – – 25 µA
VDS = 44V, VGS = 0, TJ = +150°C – – 250 µA
VGS = 20V – – 100 nA
VGS = –20V – – –100 nA
VGS = 10V, ID = 28A, VDS = 44V

– – 72 nC
– – 11 nC
– – 26 nC

VGS = 10V, VDD = 28V, ID = 28A,
RG = 12Ω

– 14 – ns
– 76 – ns
– 52 – ns
– 57 – ns

Between lead, .250 (6mm) from
package and center of die contact

VDS = 25V, VGS = 0, f = 1MHz

– 4.5 – nH
– 7.5 – nH
– 1696 – pF
– 407 – pF
– 110 – pF

Continuous Source Current (Body Diode) I
Pulsed Source Current (Body Diode) I
Diode Forward Voltage V

S

SM

F(S–D)TJ

Note 2 – – 180 A

= +25°C, IS = 28A, VGS = 0,

– – 53 A

– – 1.3 V

Note 6
Reverse Recovery Time t
Reverse Recovery Charge Q
Forward Turn–On Time t

on

rr

TJ = +25°C, IF = 28A,

di/dt = 100A/µs, Note 6

rr

Intristic turn–on time is negligible

– 67 101 ns
– 208 312 nC

(turn–on is dominated by LS + LD)

Note 2. Repetitive rating; pulse width limited by maximum junction temperature.
Note 6. Pulse width ≤ 400µs, duty cycle ≤ 2%.