NTE NTE2974 Datasheet

NTE2974
MOSFET

N–Channel, Enhancement Mode

High Speed Switch

Features:

D Low On–State Resistance: R
D Low Input Capacitance: C

= 1150pF Typ

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D High Avalanche Capability Ratings
D Isolated TO220 Type Package

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Drain–to–Source Voltage, V

Gate–to–Source Voltage, V
Drain Current, I

D

DSS

GSS

DC ±6.0A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Pulse (Note 1) ±24A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Total Power Dissipation, P

T

TC = +25°C 35W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

TA = +25°C 2.0W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Single Avalanche Current (Note 2), I
Single Avalanche Energy (Note 2), E
Channel Temperature, T
Storage Temperature Range, T

ch

stg

DS(on)

AS

AS

= 1.1Ω Max (VGS = 10V, ID = 3A)

600V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

±30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

6.0A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

12mJ. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Note 1. PW ≤ 10µs, Duty Cycle ≤ 1%.
Note 2. Starting Tch = +25°C, RG = 25Ω, VGS = 20V → 0.

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Drain–to–Source On–State Resistance R
Gate–to–Source Cutoff Voltage V
Forward Transfer Admittance |yfs| VDS = 10V, ID = 3A 2.0 – – S
Drain Leakage Current I
Gate–to–Source Leakage Current I

DS(on)VGS

GS(off)VDS

DSS
GSS

= 10V, ID = 3A – 0.8 1.1 Ω
= 10V, ID = 1mA 2.5 – 3.5 V

VDS = 600V, VGS = 0 – – 100 µA
VGS = ±30V, VDS = 0 – – ±100 nA

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn–On Delay Time t
Rise Time t
Turn–Off Delay Time t
Fall Time t
Total Gate Charge Q
Gate–to–Source Charge Q
Gate–to–Drain Charge Q
Diode Forward Voltage V
Reverse Recovery Time t
Reverse Recovery Charge Q

d(on)

d(off)

F(S–D)IF

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rss

r

f

G

GS

GD

rr

rr

.420 (10.67)

VDS = 10V, VGS = 0, f = 1MHz

VGS = 10V, VDD = 150V, ID = 3A,
RG = 10Ω, RL = 37.5Ω

VGS = 10V, ID = 6A, VDD = 480V

= 6A, VGS = 0 – 1.0 – V

IF = 6A, di/dt = 50A/µs

– 1150 – pF
– 260 – pF
– 60 – pF
– 15 – ns
– 15 – ns
– 75 – ns
– 13 – ns
– 40 – nC
– 6 – nC
– 20 – nC

– 370 – ns
– 1.5 – µC

Max

.147 (3.75)

Dia Max

.070 (1.78) Max

Gate

.100 (2.54)

.110 (2.79)

Isol

.500

(12.7)

Max

.250 (6.35)

Max

.500

(12.7)

Min

Source
Drain