NTE NTE2971 Datasheet

NTE2971
MOSFET

N–Channel, Enhancement Mode

High Speed Switch

Applications:

D SMPS
D DC–DC Converter
D Battery Charger
D Power Supply of Printer
D Copier
D HDD, FDD, TV, VCR
D Personal Computer

Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Drain–Source Voltage (VGS = 0V), V

Gate–Source Voltage (VDS = 0V), V
Drain Current, I

D

Continuous 20A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Pulsed 60A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Maximum Power Dissipation, P
Channel Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Channel–to–Case, R

DSS

GS

D

ch

stg

th(ch–c)

600V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

±30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

275W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.45°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics: (Tch = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Drain–Source Breakdown Voltage V
Gate–Source Breakdown Voltage V
Gate–Source Leakage I
Zero Gate Voltage Drain Current I
Gate Threshold Voltage V
Static Drain–Source ON Resistance R
Drain–Source On–State Voltage V
Forward Transfer Admittance |yfs| VGS = 10V, ID = 10A 8 13 – S

(BR)DSSVDS
(BR)GSSVDS

GSS

DSS

GS(th)
DS(on)VGS
DS(on)VGS

= 0V, ID = 1mA 600 – – V

= 0V, IG = ±100µA ±30 – – V
VGS = ±25V, VDS = 0V – – ±10 µA
VDS = 600V, VGS = 0 – – 1.0 mA
VDS = 10V, ID = 1mA 2.0 3.0 4.0 V

= 10V, ID = 10A – 0.33 0.43 Ω
= 10V, ID = 10A – 3.3 4.3 V

Electrical Characteristics (Cont’d): (Tch = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn–On Delay Time t
Rise Time t
Turn–Off Delay Time t
Fall Time t
Diode Forward Voltage V

d(on)

d(off)

.190 (4.82)

iss

oss

rss

r

f

SD

VGS = 0V, VDS = 25V, f = 1MHz – 2800 – pF

– 350 – pF
– 50 – pF

VDD = 200V
R

= RGS = 50Ω

GEN

IS = 10A, VGS = 0V – 1.5 2.0 V

= 10A, VGS = 10V,

, ID

– 50 – ns
– 85 – ns
– 350 – ns
– 100 – ns

.615 (15.62)

.787

(20.0)

.591

(15.02)

.787

(20.0)

.126 (3.22) Dia

GDS

.215 (5.47)