NTE NTE2969 Datasheet

NTE2969
MOSFET

N–Channel, Enhancement Mode

High Speed Switch

Features:

D Avalanche Rugged Technology
D Rugged Gate Oxide Technology
D Low Input Capacitance
D Improved Gate Charge
D Extended Safe Operating Area
D Lower Leakage Current
D Low Static Drain–Source On–State Resistance

Absolute Maximum Ratings:

Drain–Source Voltage, V
Drain Current, I

D

Continuous

TC = +25°C 25A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

TC = +100°C 15.1A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Pulsed (Note 1) 100A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Gate–Source Voltage, V
Gate Current (Pulsed), I
Single Pulsed Avalanche Energy (Note 2), E
Avalanche Current (Note 1), I
Repetitive Avalanche Energy (Note 1), E

Peak Diode Recovery dv/dt (Note 3), dv/dt 4.0V/ns. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Total Power Dissipation (TC = +25°C), P

Derate Above 25°C 2.22W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature Range, T
Storage Temperature Range, T
Maximum Lead Temperature (During Soldering, 1/8” from case, 5sec), T
Thermal Resistance:

Maximum Junction–to–Case, R

Typical Case–to–Sink, R

Maximum Junction–to–Ambient, R

DSS

GS

GM

AS

stg

thCS

D

thJC

AR

thJA

AS

J

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

L

0.45°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.24°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

±30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

±1.5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1429mJ. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

25A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

27.8mJ. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

278W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+300°C. . . . . . . . . . . . . .

40°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 2. L = 4mH, IAS = 25A, VDD = 50V, RG = 27Ω, Starting TJ = +25°C.
Note 3. ISD ≤ 25A, di/dt ≤ 320A/µs, VDD ≤ BV

, Starting TJ = +25°C.

DSS

Electrical Characteristics: (TC = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Drain–Source Breakdown Voltage BV

Breakdown Voltage Temperature

DSSVGS

DBV/DT

ID = 250µA

J

Coefficient

Gate Threshold Voltage V
Gate–Source Leakage Forward I
Gate–Source Leakage Reverse I
Zero Gate Voltage Drain Current I

Static Drain–Source ON Resistance R
Forward Transconductance g
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn–On Delay Time t
Rise Time t
Turn–Off Delay Time t
Fall Time t
Total Gate Charge Q
Gate–Source Charge Q
Gate–Drain (“Miller”) Charge Q

Source–Drain Diode Ratings and Characteristics

GS(th)VDS

GSS
GSS
DSS

VGS = 30V – – 100 nA
VGS = –30V – – –100 nA
VDS = 400V, VGS = 0 – – 10 µA
VDS = 320V, TC = +1 50°C – – 100 µA

DS(on)VGS

VDS = 50V, ID = 12.5A, Note 4 – 18.91 – mhos

fs

VGS = 0V, VDS = 25V, f = 1MHz – 3180 4130 pF

iss

oss

rss

d(on)

VDD = 200V
Note 4, Note 5

r

d(off)

f

VGS = 10V, ID = 25A, VDS = 320V,

g

Note 4, Note 5

gs
gd

= 0V, ID = 250µA 400 – – V

– 0.20 – V/°C

= 5V, ID = 250µA 2.0 – 4.0 V

= 10V, ID = 12.5A, Note 4 – – 0.2 Ω

– 435 500 pF
– 200 240 pF

= 25A, RG = 5.3Ω,

, ID

– 22 55 ns
– 22 60 ns
– 127 260 ns
– 38 85 ns
– 140 182 nC
– 21 – nC
– 64.8 – nC

Continuous Source Current I
Pulse Source Current I
Diode Forward Voltage V
Reverse Recovery Time t

Reverse Recovery Charge

SM

Q

(Body Diode) – – 25 A

S

(Body Diode) Note 1 – – 100 A
TJ = +25°C, IS = 25A, VGS = 0V, Note 4 – – 1.5 V

SD

TJ = +25°C, IF = 25A, dIF/dt = 100A/µs – 484 – ns

rr

rr

– 7.6 – µC

Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 4. Pulse Test: Pulse Width ≤ 250µs, Duty Cycle ≤ 2%.
Note 5. Essentially independent of operating temperature.