NTE NTE2960 Datasheet
NTE2960
MOSFET
N–Channel, Enhancement Mode
High Speed Switch
Applications:
D SMPS
D DC–DC Converter
D Battery Charger
D Power Supply of Printer
D Copier
D HDD, FDD, TV, VCR
D Personal Computer
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Drain–Source Voltage (VGS = 0V), V
Gate–Source Voltage (VDS = 0V), V
Drain Current, I
D
Continuous 7A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulsed 21A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Power Dissipation, P
Channel Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Channel–to–Case, R
Isolation Voltage, V
ISO
DSS
GS
D
ch
stg
th(ch–c)
900V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
40W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3.13°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2000V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (Tch = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Drain–Source Breakdown Voltage V
Gate–Source Breakdown Voltage V
Gate–Source Leakage I
Zero Gate Voltage Drain Current I
Gate Threshold Voltage V
Static Drain–Source ON Resistance R
Drain–Source On–State Voltage V
Forward Transfer Admittance |yfs| VGS = 10V, ID = 3A 4.2 7.0 – S
(BR)DSSVDS
(BR)GSSVDS
GSS
DSS
GS(th)
DS(on)VGS
DS(on)VGS
= 0V, ID = 1mA 900 – – V
= 0V, IG = ±100µA ±30 – – V
VGS = ±25V, VDS = 0V – – ±10 µA
VDS = 900V, VGS = 0 – – 1.0 mA
VDS = 10V, ID = 1mA 2.0 3.0 4.0 V
= 10V, ID = 3A – 1.54 2.00 Ω
= 10V, ID = 3A – 4.62 6.00 V
Electrical Characteristics (Cont’d): (Tch = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn–On Delay Time t
Rise Time t
Turn–Off Delay Time t
Fall Time t
Diode Forward Voltage V
d(on)
d(off)
.114 (2.9)
VGS = 0V, VDS = 25V, f = 1MHz – 1380 – pF
iss
oss
rss
VDD = 200V
R
r
f
IS = 3A, VGS = 0V – 1.0 1.5 V
SD
.181 (4.6)
Max
.252
(6.4)
= RGS = 50Ω
GEN
= 3A, VGS = 10V,
, ID
.126 (3.2) Dia Max
.405 (10.3)
Max
Isol
– 140 – pF
– 28 – pF
– 25 – ns
– 28 – ns
– 185 – ns
– 46 – ns
.531
(13.5)
Min
.622
(15.0)
Max
GDS
.118
(3.0)
Max
.100 (2.54).098 (2.5)
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