NTE NTE296 Datasheet

NTE296

Silicon PNP Transistor

General Purpose Amplifier

Description:

The NTE296 is a silicon PNP transistor in a TO202 type case designed for general purpose applica­tions requiring high breakdown voltages, low saturation voltages and low capacitance.

Absolute Maximum Ratings

Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Total Power Dissipation (T

:

CEO

CB

EB

C

= +25°C), P

A

D

Derate Above 25°C 16mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Total Power Dissipation (T

= +25°C), P

C

D

Derate Above 25°C 80mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature Range, T
Storage Temperature Range, T

stg

J

Thermal Resistance, Junction–to–Ambient, R
Thermal Resistance, Junction–to–Case, R

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics

Collector–Emitter Breakdown Voltage V
Collector–Base Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Collector Cutoff Current I
Emitter Cutoff Current I

(TA = +25°C unless otherwise specified)

(BR)CEOIC
(BR)CBOIC
(BR)EBOIE

thJC

CBO
EBO

300V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

300V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

500mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

10W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

thJA

62.5°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

12.5°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

= 1mA, IB = 0, Note 1 300 – – V
= 100µA, IE = 0 300 – – V

= 10µA, IC = 0 5 – – V
VCB = 200V, IE = 0 – – 0.2 µA
VBE = 3V, IC = 0 – – 0.1 µA

5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

2W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

ON Characteristics

DC Current Gain h

Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V

Dynamic Characteristics

Current Gain–Bandwidth Product f
Collector–Base Capacitance C

CE(sat)IC
BE(sat)IC

FE

T
cb

IC = 1mA, VCE = 10V 25 – –
IC = 10mA, VCE = 10V 30 – –
IC = 30mA, VCE = 10V 30 – –

= 30mA, IB = 3mA – – 0.75 V

= 30mA, IB = 3mA – – 0.9 V

IC = 10mA, VCE = 20V, f = 10MHz 45 – – MHz
VCB = 20V, IE = 0, f = 1MHz – – 8 pF

Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.

C

.132 (3.35) Dia

.180 (4.57).380 (9.56)

1.200

(30.48)

Ref

.500

(12.7)

.300

(7.62)

.400

(10.16)

Min

.325

(9.52)

.070 (1.78) x 45°

Chamf

.050 (1.27)

EBC

.100 (2.54) .100 (2.54)