NTE NTE2957 Datasheet

NTE2957
MOSFET

N–Channel, Enhancement Mode

High Speed Switch

Applications:

D SMPS
D DC–DC Converter
D Battery Charger
D Power Supply of Printer
D Copier
D HDD, FDD, TV, VCR
D Personal Computer

Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Drain–Source Voltage (VGS = 0V), V

Gate–Source Voltage (VDS = 0V), V
Drain Current, I

D

Continuous 5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Pulsed 15A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Maximum Power Dissipation, P
Channel Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Channel–to–Case, R
Isolation Voltage, V

ISO

DSS

GS

D

ch

stg

th(ch–c)

700V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

±30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

30W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

4.17°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

2000V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics: (Tch = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Drain–Source Breakdown Voltage V
Gate–Source Breakdown Voltage V
Gate–Source Leakage I
Zero Gate Voltage Drain Current I
Gate Threshold Voltage V
Static Drain–Source ON Resistance R
Drain–Source On–State Voltage V
Forward Transfer Admittance |yfs| VGS = 10V, ID = 2A 2.5 4.2 – S

(BR)DSSVDS
(BR)GSSVDS

GSS

DSS

GS(th)
DS(on)VGS
DS(on)VGS

= 0V, ID = 1mA 700 – – V

= 0V, IG = ±100µA ±30 – – V
VGS = ±25V, VDS = 0V – – ±10 µA
VDS = 700V, VGS = 0 – – 1.0 mA
VDS = 10V, ID = 1mA 2.0 3.0 4.0 V

= 10V, ID = 2A – 2.0 2.6 Ω
= 10V, ID = 2A – 4.0 5.2 V

Electrical Characteristics (Cont’d): (Tch = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn–On Delay Time t
Rise Time t
Turn–Off Delay Time t
Fall Time t
Diode Forward Voltage V

d(on)

d(off)

.114 (2.9)

VGS = 0V, VDS = 25V, f = 1MHz – 770 – pF

iss

oss

rss

VDD = 200V
R

r

f

IS = 2A, VGS = 0V – 1.0 1.5 V

SD

.181 (4.6)
Max

.252
(6.4)

= RGS = 50Ω

GEN

= 2A, VGS = 10V,

, ID

.126 (3.2) Dia Max

.405 (10.3)

Max

Isol

– 88 – pF
– 16 – pF
– 15 – ns
– 18 – ns
– 90 – ns
– 25 – ns

.531

(13.5)

Min

.622

(15.0)

Max

GDS

.118

(3.0)

Max

.100 (2.54).098 (2.5)