NTE NTE2955 Datasheet

NTE2955
MOSFET

N–Channel, Enhancement Mode

High Speed Switch

Application:

D CS Switch for CRT Display Monitor

Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Drain–Source Voltage (VGS = 0V), V

Gate–Source Voltage (VDS = 0V), V
Drain Current, I

D

Continuous 10A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Pulsed 30A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Avalanche Drain Current (Pulsed, L = 200µH), I
Maximum Power Dissipation, P
Channel Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Channel–to–Case, R
Isolation Voltage (AC for 1 minute, Terminal–to–Case), V

DSS

GS

DA

D

ch

stg

th(ch–c)

ISO

250V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

±20V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

10A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

32W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

3.91°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

2000V. . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics: (Tch = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Drain–Source Breakdown Voltage V
Gate–Source Leakage I
Zero Gate Voltage Drain Current I
Gate Threshold Voltage V
Static Drain–Source ON Resistance R
Drain–Source On–State Voltage V
Forward Transfer Admittance |yfs| VGS = 10V, ID = 5A – 9.0 – S

(BR)DSSVDS

GSS

DSS

GS(th)
DS(on)VGS
DS(on)VGS

= 0V, ID = 1mA 250 – – V
VGS = ±20V, VDS = 0V – – ±10 µA
VDS = 250V, VGS = 0 – – 1.0 mA
VDS = 10V, ID = 1mA 2.0 3.0 4.0 V

= 10V, ID = 5A – 0.40 0.52 Ω
= 10V, ID = 5A – 2.0 2.6 V

Electrical Characteristics (Cont’d): (Tch = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn–On Delay Time t
Rise Time t
Turn–Off Delay Time t
Fall Time t
Diode Forward Voltage V

d(on)

d(off)

.114 (2.9)

VGS = 0V, VDS = 25V, f = 1MHz – 950 – pF

iss

oss

rss

VDD = 150V
R

r

f

IS = 5A, VGS = 0V – 0.95 – V

SD

.181 (4.6)
Max

.252
(6.4)

= RGS = 50Ω

GEN

= 5A, VGS = 10V,

, ID

.126 (3.2) Dia Max

.405 (10.3)

Max

Isol

– 90 – pF
– 25 – pF
– 20 – ns
– 25 – ns
– 150 – ns
– 40 – ns

.531

(13.5)

Min

.622

(15.0)

Max

GDS

.118

(3.0)

Max

.100 (2.54).098 (2.5)