NTE NTE2954 Datasheet
NTE2954
MOSFET
N–Channel, Enhancement Mode
High Speed Switch
Applications:
D Motor Control
D Lamp Control
D Solenoid Control
D DC–DC Converter
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Drain–Source Voltage (VGS = 0V), V
Gate–Source Voltage (VDS = 0V), V
Drain Current, I
D
Continuous 70A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulsed 280A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Avalanche Drain Current (Pulsed, L = 100µH), I
Source Current, I
S
Continuous 70A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulsed 280A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Power Dissipation, P
Channel Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Channel–to–Case, R
Isolation Voltage (AC for 1 minute, Terminal–to–Case), V
DSS
GS
DA
D
ch
stg
th(ch–c)
ISO
100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±20V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
70A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
35W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3.57°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2000V. . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (Tch = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Drain–Source Breakdown Voltage V
Gate–Source Leakage I
Zero Gate Voltage Drain Current I
Gate Threshold Voltage V
Static Drain–Source ON Resistance R
Drain–Source On–State Voltage V
Forward Transfer Admittance |yfs| VGS = 10V, ID = 35A – 68 – S
(BR)DSSVDS
GSS
DSS
GS(th)
DS(on)VGS
DS(on)VGS
= 0V, ID = 1mA 100 – – V
VGS = ±20V, VDS = 0V – – ±0.1 µA
VDS = 100V, VGS = 0 – – 0.1 mA
VDS = 10V, ID = 1mA 1.0 1.5 2.0 V
= 10V, ID = 35A – 13 17 mΩ
VGS = 4V, ID = 35A – 14 18 mΩ
= 10V, ID = 35A – 0.46 0.60 V
Electrical Characteristics (Cont’d): (Tch = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn–On Delay Time t
Rise Time t
Turn–Off Delay Time t
Fall Time t
Diode Forward Voltage V
Reverse Recovery Time t
d(on)
d(off)
.114 (2.9)
VGS = 0V, VDS = 10V, f = 1MHz – 8200 – pF
iss
oss
rss
VDD = 50V
R
r
f
IS = 35A, VGS = 0V – 1.0 1.5 V
SD
IS = 70A, dIF/dt = 100A/µs – 115 – ns
rr
.181 (4.6)
Max
.252
(6.4)
= RGS = 50Ω
GEN
ID = 35A, VGS = 10V,
,
.126 (3.2) Dia Max
.405 (10.3)
Max
Isol
– 1150 – pF
– 600 – pF
– 54 – ns
– 140 – ns
– 830 – ns
– 350 – ns
.531
(13.5)
Min
.622
(15.0)
Max
GDS
.118
(3.0)
Max
.100 (2.54).098 (2.5)
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