NTE NTE2945 Datasheet

NTE2945
MOSFET

N–Channel, Enhancement Mode

High Speed Switch

Features:

D Low Static Drain–Source ON Resistance
D Improved Inductive Ruggedness
D Fast Switching Times
D Low Input Capacitance
D Extended Safe Operating Area
D Improved High Temperature Reliability
D TO220 Type Isolated Package

Absolute Maximum Ratings:

Drain–Source Voltage (Note 1), V
Drain–Gate Voltage (R
Gate–Source Voltage, V
Drain Current, I

D

= 1MΩ, Note 1), V

GS

GS

Continuous

= +25°C 5.5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

T

C

T

= +100°C 3.9A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

C

Pulsed (Note 2) 40A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Gate Current (Pulsed), I

GM

Single Pulsed Avalanche Energy (Note 3), E
Avalanche Current, I
Total Power Dissipation (T

AS

= +25°C), P

C

Derate Above 25°C 0.32W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature Range, T
Storage Temperature Range, T
Maximum Lead Temperature (During Soldering, 1/8” from case, 5sec), T
Thermal Resistance:

Maximum Junction–to–Case, R

Typical Case–to–Sink (Mounting surface flat, smooth, and greased), R

Maximum Junction–to–Ambient (Free Air Operation), R

DSS

DGR

AS

D

J

stg

thJC

thJA

400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

±20V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

±1.5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

157mJ. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

5.5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

40W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

L

+300°C. . . . . . . . . . . . . .

3.12K/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

thCS

0.5K/W. . . . . . .

62.5K/W. . . . . . . . . . . . . . . . . . . .

Note 1. T

= +25° to +150°C.

J

Note 2. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 3. L = 9.1mH, V

= 50V, RG = 25Ω, Starting TJ = +25°C.

DD

Electrical Characteristics: (TC = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Drain–Source Breakdown Voltage BV
Gate Threshold Voltage V
Gate–Source Leakage Forward I
Gate–Source Leakage Reverse I
Zero Gate Voltage Drain Current I

DSSVGS

GS(th)VDS

GSS
GSS
DSS

VGS = 20V – – 100 nA
VGS = –20V – – –100 nA
VDS = Max. Rating, VGS = 0 – – 250 µA

VDS = 0.8 Max. Rating, TC = +125°C – – 1000 µA
Static Drain–Source ON Resistance R
Forward Transconductance g
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn–On Delay Time t
Rise Time t
Turn–Off Delay Time t
Fall Time t

DS(on)VGS

VDS ≥ 50V, ID = 5A, Note 4 5.8 8.7 – mhos

fs

VGS = 0V, VDS = 25V, f = 1MHz – 1500 – pF

iss

oss

rss

d(on)

VDD = 0.5 BV

(MOSFET switching times are essentially

r

independent of operating temperature)

independent of operating temperature)

d(off)

f

Total Gate Charge

(Gate–Source Plus Gate–Drain)
Gate–Source Charge Q
Gate–Drain (“Miller”) Charge Q

Q

VGS = 10V, ID = 10A, VDS = 0.8 Max.

g

Rating, (Gate charge is essentially

gs

independent of operating temperature)

independent of operating temperature)

gd

Source–Drain Diode Ratings and Characteristics

= 0v, ID = 250µA 450 – – V
= VGS, ID = 250µA 2.0 – 4.0 V

= 10V, ID = 5A, Note 4 – – 0.55 Ω

– 170 – pF
– 75 – pF

= 10A, ZO = 9.1Ω,

DSS, ID

– 14 21 ns
– 27 41 ns
– 50 75 ns
– 24 36 ns

– – 79 nC
– 1013 – nC
– 32.3 – nC

Continuous Source Current I
Pulse Source Current I
Diode Forward Voltage V
Reverse Recovery Time t

SM

(Body Diode) – – 10 A

S

(Body Diode) Note 2 – – 40 A
TJ = +25°C, IS = 10A, VGS = 0V, Note 4 – – 2 V

SD

TJ = +25°C, IF = 10A, dIF/dt = 100A/µs – 370 – ns

rr

Note 2. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 4. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.