NTE NTE2941 Datasheet

NTE2941
MOSFET

N–Ch, Enhancement Mode

High Speed Switch

Features:

D Low Static Drain–Source ON Resistance
D Improved Inductive Ruggedness
D Fast Switching Times
D Low Input Capacitance
D Extended Safe Operating Area
D TO220 Type Isolated Package

Absolute Maximum Ratings:

Drain–Source Voltage (Note 1), V
Drain–Gate Voltage (R
Gate–Source Voltage, V
Drain Current, I

D

= 1MΩ, Note 1), V

GS

GS

Continuous

T

= +25°C 28A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

C

= +100°C 19.6A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

T

C

Pulsed (Note 2) 200A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Gate Current (Pulsed), I

GM

Single Pulsed Avalanche Energy (Note 3), E
Avalanche Current, I

AS

Total Power Dissipation (TC = +25°C), P

Derate Above 25°C 0.52W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature Range, T
Storage Temperature Range, T
Maximum Lead Temperature (During Soldering, 1/8” from case, 5sec), T
Thermal Resistance:

Maximum Junction–to–Case, R

Typical Case–to–Sink (Mounting surface flat, smooth, and greased), R

Maximum Junction–to–Ambient (Free Air Operation), R

DSS

DGR

AS

D

J

stg

thJC

thJA

60V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

60V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

±20V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

±1.5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

48mJ. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

28A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

48W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +175°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +175°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

L

+300°C. . . . . . . . . . . . . .

1.92K/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

thCS

0.5K/W. . . . . . .

62.5K/W. . . . . . . . . . . . . . . . . . . .

Note 1. T

= +25° to +175°C.

J

Note 2. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 3. L = 50µH, V

= 25V, RG = 25Ω, Starting TJ = +25°C.

DD

Electrical Characteristics: (TC = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Drain–Source Breakdown Voltage BV
Gate Threshold Voltage V
Gate–Source Leakage Forward I
Gate–Source Leakage Reverse I
Zero Gate Voltage Drain Current I

DSSVGS

GS(th)VDS

GSS
GSS
DSS

VGS = 20V – – 100 nA
VGS = –20V – – –100 nA
VDS = Max. Rating, VGS = 0 – – 250 µA

VDS = 0.8 Max. Rating, TC = +150°C – – 1000 µA
Static Drain–Source ON Resistance R
Forward Transconductance g

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn–On Delay Time t
Rise Time t
Turn–Off Delay Time t
Fall Time t

DS(on)VGS

VDS ≥ 50V, ID = 25A, Note 4 15 – – mho

fs

VGS = 0V, VDS = 25V, f = 1MHz – 2450 – pF

iss

oss

rss

d(on)

VDD = 0.5 BV

(MOSFET switching times are essentially

r

independent of operating temperature)

independent of operating temperature)

d(off)

f

Total Gate Charge

(Gate–Source Plus Gate–Drain)
Gate–Source Charge Q
Gate–Drain (“Miller”) Charge Q

Q

VGS = 10V, ID = 50A, VDS = 0.8 Max.

g

Rating, (Gate charge is essentially

gs

independent of operating temperature)

independent of operating temperature)

gd

Source–Drain Diode Ratings and Characteristics

= 0V, ID = 250µA 60 – – V
= VGS, ID = 250µA 2.0 – 4.0 V

= 10V, ID = 25A, Note 4 – – 0.028 Ω

– 740 – pF
– 360 – pF

ID = 50A, ZO = 9.1Ω,

DSS,

– – 32 ns
– – 210 ns
– – 75 ns
– – 130 ns

– – 87 nC
– 26.6 – nC
– 30.6 – nC

s

Continuous Source Current I
Pulse Source Current I
Diode Forward Voltage V
Reverse Recovery Time t

SM

(Body Diode) – – 150 A

S

(Body Diode) Note 2 – – 200 A
TJ = +25°C, IS = 50A, VGS = 0V, Note 4 – – 2.5 V

SD

TJ = +25°C, IF = 50A, dIF/dt = 100A/µs – – 250 ns

rr

Note 2. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 4. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.