NTE NTE293, NTE294 Datasheet
NTE293 (NPN) & NTE294 (PNP)
Silicon Complementary Transistors
Audio Amplifier and Driver
Description:
The NTE293 (NPN) and NTE294 (PNP) are silicon complementary transistors in a Giant TO92 type
package designed for use in low–frequency power amplification and drive applications.
Features:
D Low Collector–Emitter Saturation Voltage
Absolute Maximum Ratings:
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
EBO
C
(TA = +25°C unless otherwise specified)
CBO
CEO
Continuous 1A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak 1.5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation, P
C
Operating Junction Temperature, T
Storage Temperature Range, T
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Collector–Base Breakdown Voltage V
Collector–Emitter Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Collector Cutoff Current I
DC Current Gain h
stg
(TA = +25°C unless otherwise specified)
J
(BR)CBOIC
(BR)CEOIC
(BR)EBOIE
CBO
FE
60V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
50V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 10µA, IE = 0 60 – – V
= 2mA, IB = 0 50 – – V
= 10µA, IC = 0 5 – – V
VCB = 20V, IE = 0 – – 0.1 µA
VCE = 10V, IC = 500mA, Note 2 120 – 240
VCE = 5V, IB = 1A, Note 2 50 100 –
Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V
Current–Gain Bandwidth Product f
Collector Output Capacitance C
CE(sat)IC
BE(sat)IC
T
ob
= 500mA, IB = 50mA, Note 2 – 0.2 0.4 V
= 500mA, IB = 50mA, Note 2 – 0.85 1.2 V
VCB = 10V, IE = 50mA, f = 200MHz – 200 – MHz
VCB = 10V, Ie = 0, f = 1MHz – 11 20 pF
Note 1. NTE293MP is a matched pair of NTE293 with their DC Current Gain (hFE) matched to within
10% of each other.
Note 2. Pulse measurement.
.339
(8.62)
Max
.512
(13.0)
Min
.100 (2.54)
Seating Plane
.026 (.66)
Dia Max
E C B
.240 (6.09) Max
.200
(5.08)
Max
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