NTE NTE2935 Datasheet
NTE2935
MOSFET
N–Channel, Enhancement Mode
High Speed Switch
Features:
D Avalanche Rugged Technology
D Rugged Gate Oxide Technology
D Lower Input Capacitance
D Improved Gate Charge
D Extended Safe Operating Area
D Lower RDS(on): 0.638Ω Typ
D Lower Leakage Current: 10µA (Max) @ VDS = 500V
Absolute Maximum Ratings:
Drain–to–Source Voltage, V
Drain Current, I
D
Continuous
TC = +25°C 6.2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TC = +100°C 3.9A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulsed (Note 1) 34A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (TC = +25°C), P
Derate Above 25°C 0.68W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate–Source Voltage, V
Single Pulsed Avalanche Energy (Note 2), E
Avalanche Current (Note 1), I
Repetitive Avalanche Energy (Note 1), E
Peak Diode Recovery dv/dt (Note 3), dv/dt 3.5V/ns. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
Storage Temperature Range, T
Maximum Lead Temperature (During Soldering, 1/8” from case, 5sec), T
Thermal Resistance, Junction–to–Case, R
Thermal Resistance, Junction–to–Ambient, R
GS
DSS
AR
stg
D
AR
AS
J
thJC
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
L
1.46°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJA
500V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
85W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
641mJ. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6.2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8.5mJ. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+300°C. . . . . . . . . . . . . .
40°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 2. L = 30mH, IAS = 6.2A, VDD = 50V, RG = 27Ω, Starting TJ = +25°C.
Note 3. ISD ≤ 8A, di/dt ≤ 160A/µs, VDD ≤ V
(BR)DSS
, Starting TJ = +25°C.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Drain–Source Breakdown Voltage BV
Breakdown Voltage Temperature
Coefficient
Gate Threshold V oltage V
Gate–Source Leakage Forward I
Gate–Source Leakage Reverse I
Drain–to–Source Leakage Current I
Static Drain–Source ON Resistance R
Forward Transconductance g
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn–On Delay Time t
Rise Time t
Turn–Off Delay Time t
Fall Time t
Total Gate Charge Q
Gate–Source Charge Q
Gate–Drain (“Miller”) Charge Q
∆V
DSS
(BR)DSS
∆T
J
GS(th)
GSS
GSS
DSS
DS(on)
fs
iss
oss
rss
d(on)
r
d(off)
f
g
gs
gd
/
Source–Drain Diode Ratings and Characteristics
VGS = 0V, ID = 250µA 500 – – V
ID = 250µA – 0.66 – V/°C
VDS = 5V, ID = 250µA 2.0 – 4.0 V
VGS = 30V – – 100 nA
VGS = –30V – – –100 nA
VDS = 500V – – 10 µA
VDS = 400V, TC = +1 25°C – – 100 µA
VGS = 10V, ID = 3.1A, Note 4 – – 0.85 Ω
VDS = 50V, ID = 3.1A, Note 4 – 5.73 – mhos
VGS = 0V, VDS = 25V, f = 1MHz – 1 190 1550 pF
– 150 175 pF
– 166 75 pF
VDD = 250V
, ID
Note 4, Note 5
= 8A, RG = 9.1Ω,
– 18 45 ns
– 22 55 ns
– 83 175 ns
– 30 70 ns
VGS = 10V, ID = 8A, VDS = 400V,
Note 4, Note 5
– 57 74 nC
– 7.5 – nC
– 28.4 – nC
Continuous Source Current I
Pulse Source Current I
Diode Forward Voltage V
Reverse Recovery Time t
Reverse Recovery Charge Q
S
SM
SD
rr
(Body Diode) – – 6.2 A
(Body Diode) Note 1 – – 34 A
TJ = +2 5°C, IS = 6.2A, VGS = 0V, Note 4 – – 1.4 V
TJ = +25°C, IF = 8A, diF/dt = 100A/µs,
Note 4
rr
– 370 – ns
– 3.9 – µC
Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 4. Pulse Test: Pulse Width = 250µs, Duty Cycle ≤ 2%.
Note 5. Essentially independent of operating temperature.
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