NTE NTE2934 Datasheet

NTE2934
MOSFET

N–Channel, Enhancement Mode

High Speed Switch

Features:

D Avalanche Rugged Technology
D Rugged Gate Oxide Technology
D Lower Input Capacitance
D Improved Gate Charge
D Extended Safe Operating Area
D Lower RDS(on): 0.254Ω Typ
D Lower Leakage Current: 10µA (Max) @ VDS = 400V

Absolute Maximum Ratings:

Drain–to–Source Voltage, V
Drain Current, I

D

Continuous

TC = +25°C 11.5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

TC = +100°C 7.3A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Pulsed (Note 1) 68A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Total Power Dissipation (TC = +25°C), P

Derate Above 25°C 0.74W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Gate–Source Voltage, V
Single Pulsed Avalanche Energy (Note 2), E
Avalanche Current (Note 1), I
Repetitive Avalanche Energy (Note 1), E

Peak Diode Recovery dv/dt (Note 3), dv/dt 4.0V/ns. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature Range, T
Storage Temperature Range, T
Maximum Lead Temperature (During Soldering, 1/8” from case, 5sec), T
Thermal Resistance, Junction–to–Case, R
Thermal Resistance, Junction–to–Ambient, R

GS

DSS

AR

stg

D

AR

AS

J

thJC

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

L

1.35°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

thJA

400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

92W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

±30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1134mJ. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

11.5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

9.2mJ. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+300°C. . . . . . . . . . . . . .

40°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 2. L = 15mH, IAS = 11.5A, VDD = 50V, RG = 27Ω, Starting TJ = +25°C.
Note 3. ISD ≤ 17A, di/dt ≤ 250A/µs, VDD ≤ V

(BR)DSS

, Starting TJ = +25°C.

Electrical Characteristics: (TC = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Drain–Source Breakdown Voltage BV
Breakdown Voltage Temperature

Coefficient
Gate Threshold V oltage V
Gate–Source Leakage Forward I
Gate–Source Leakage Reverse I
Drain–to–Source Leakage Current I

Static Drain–Source ON Resistance R
Forward Transconductance g
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn–On Delay Time t
Rise Time t
Turn–Off Delay Time t
Fall Time t
Total Gate Charge Q
Gate–Source Charge Q
Gate–Drain (“Miller”) Charge Q

∆V

DSS

(BR)DSS

∆T

J

GS(th)

GSS
GSS
DSS

DS(on)

fs

iss

oss

rss

d(on)

r

d(off)

f

g
gs
gd

/

Source–Drain Diode Ratings and Characteristics

VGS = 0V, ID = 250µA 400 – – V
ID = 250µA – 0.46 – V/°C

VDS = 5V, ID = 250µA 2.0 – 4.0 V
VGS = 30V – – 100 nA
VGS = –30V – – –100 nA
VDS = 400V – – 10 µA
VDS = 320V, TC = +1 25°C – – 100 µA
VGS = 10V, ID = 5.75A, Note 4 – – 0.3 Ω
VDS = 50V, ID = 5.75A, Note 4 – 9.75 – mhos
VGS = 0V, VDS = 25V, f = 1MHz – 2140 2780 pF

– 305 350 pF
– 134 155 pF

VDD = 200V

, ID

Note 4, Note 5

= 17A, RG = 6.2Ω,

– 20 50 ns
– 22 55 ns
– 100 210 ns
– 32 75 ns

VGS = 10V, ID = 17A, VDS = 320V,
Note 4, Note 5

– 101 131 nC
– 14 – nC
– 51.5 – nC

Continuous Source Current I
Pulse Source Current I
Diode Forward Voltage V
Reverse Recovery Time t
Reverse Recovery Charge Q

S

SM

SD

rr

(Body Diode) – – 11.5 A
(Body Diode) Note 1 – – 68 A
TJ = +2 5°C, IS = 11.5A, VGS = 0V, Note 4 – – 1.5 V
TJ = +25°C, IF = 17A, diF/dt = 100A/µs,

Note 4

rr

– 385 – ns
– 4.85 – µC

Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 4. Pulse Test: Pulse Width = 250µs, Duty Cycle ≤ 2%.
Note 5. Essentially independent of operating temperature.