NTE NTE2932 Datasheet
NTE2932
MOSFET
N–Channel, Enhancement Mode
High Speed Switch
Features:
D Avalanche Rugged Technology
D Rugged Gate Oxide Technology
D Lower Input Capacitance
D Improved Gate Charge
D Extended Safe Operating Area
D Lower RDS(on): 0.071Ω Typ
D Lower Leakage Current: 10µA (Max) @ VDS = 200V
Absolute Maximum Ratings:
Drain–to–Source Voltage, V
Drain Current, I
D
Continuous
TC = +25°C 21.3A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TC = +100°C 13.5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulsed (Note 1) 130A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (TC = +25°C), P
Derate Above 25°C 0.72W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate–Source Voltage, V
Single Pulsed Avalanche Energy (Note 2), E
Avalanche Current (Note 1), I
Repetitive Avalanche Energy (Note 1), E
Peak Diode Recovery dv/dt (Note 3), dv/dt 5.0V/ns. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
Storage Temperature Range, T
Maximum Lead Temperature (During Soldering, 1/8” from case, 5sec), T
Thermal Resistance, Junction–to–Case, R
Thermal Resistance, Junction–to–Ambient, R
GS
DSS
AR
stg
D
AR
AS
J
thJC
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
L
1.38°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJA
200V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
90W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
605mJ. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
21.3A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
9mJ. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+300°C. . . . . . . . . . . . . .
40°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 2. L = 2mH, IAS = 21.3A, VDD = 50V, RG = 27Ω, Starting TJ = +25°C.
Note 3. ISD ≤ 32A, di/dt ≤ 320A/µs, VDD ≤ V
(BR)DSS
, Starting TJ = +25°C.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Drain–Source Breakdown Voltage BV
Breakdown Voltage Temperature
Coefficient
Gate Threshold V oltage V
Gate–Source Leakage Forward I
Gate–Source Leakage Reverse I
Drain–to–Source Leakage Current I
Static Drain–Source ON Resistance R
Forward Transconductance g
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn–On Delay Time t
Rise Time t
Turn–Off Delay Time t
Fall Time t
Total Gate Charge Q
Gate–Source Charge Q
Gate–Drain (“Miller”) Charge Q
∆V
DSS
(BR)DSS
∆T
J
GS(th)
GSS
GSS
DSS
DS(on)
fs
iss
oss
rss
d(on)
r
d(off)
f
g
gs
gd
/
Source–Drain Diode Ratings and Characteristics
VGS = 0V, ID = 250µA 200 – – V
ID = 250µA – 0.24 – V/°C
VDS = 5V, ID = 250µA 2.0 – 4.0 V
VGS = 30V – – 100 nA
VGS = –30V – – –100 nA
VDS = 200V – – 10 µA
VDS = 160V, TC = +1 50°C – – 100 µA
VGS = 10V, ID = 10.65A, Note 4 – – 0.085 Ω
VDS = 40V, ID = 10.65A, Note 4 – 16.64 – mhos
VGS = 0V, VDS = 25V, f = 1MHz – 2300 3000 pF
– 410 475 pF
– 200 230 pF
VDD = 100V
, ID
Note 4, Note 5
= 32A, RG = 6.2Ω,
– 21 50 ns
– 20 50 ns
– 77 160 ns
– 38 90 ns
VGS = 10V, ID = 32A, VDS = 160V,
Note 4, Note 5
– 95 123 nC
– 18 – nC
– 45.3 – nC
Continuous Source Current I
Pulse Source Current I
Diode Forward Voltage V
Reverse Recovery Time t
Reverse Recovery Charge Q
S
SM
SD
rr
(Body Diode) – – 21.3 A
(Body Diode) Note 1 – – 130 A
TJ = +2 5°C, IS = 21.3A, VGS = 0V, Note 4 – – 1.5 V
TJ = +25°C, IF = 32A, diF/dt = 100A/µs,
Note 4
rr
– 203 – ns
– 1.52 – µC
Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 4. Pulse Test: Pulse Width = 250µs, Duty Cycle ≤ 2%.
Note 5. Essentially independent of operating temperature.
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