NTE NTE2924 Datasheet

NTE2924
MOSFET

N–Ch, Enhancement Mode

High Speed Switch

Features:

D Dynamic dv/dt Rating
D Repetitive Avalanche Rated
D Isolated Central Mounting Hole
D Fast Switching
D Ease of Paralleling
D Simple Drive Requirements

Absolute Maximum Ratings:

Continuous Drain Current (VGS = 10V), I

TC = +25°C 6.8A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

T

= +100°C 4.3A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

C

Pulsed Drain Current (Note 1), I
Power Dissipation (T

= +25°C), P

C

DM

D

Derate Linearly Above 25°C 1.2W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Gate–to–Source Voltage, V

GS

Single Pulse Avalanche Energy (Note 2), E
Avalanche Current (Note 1), I

AR

Repetitive Avalanche Energy (Note 1), E

Peak Diode Recovery dv/dt (Note 3), dv/dt 3V/ns. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature Range, T
Storage Temperature Range, T

stg

Lead Temperature (During Soldering, 1.6mm from case for 10sec), T

Mounting Torque (6–32 or M3 Screw) 10 lbfin (1.1Nm). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Thermal Resistance, Junction–to–Case, R
Thermal Resistance, Junction–to–Ambient, R
Typical Thermal Resistance, Case–to–Sink (Flat, Greased Surface), R

D

AR

AS

J

thJC

thJA

L

thCS

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.83°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.24°C/W. . . . . . . . . . .

27A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

150W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

±20. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

410mJ. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

6.8A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

15mJ. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+300°C. . . . . . . . . . . . . . . . .

40°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Note 1. Repetitive rating; pulse width limited by maximum junction temperature.
Note 2. V
Note 3. I

= 50V, starting TJ = +25°C, L = 16mH, RG = 25Ω, IAS = 6.8A

DD

≤ 6.8A, di/dt ≤ 80A/µs, VDD ≤ 600V, TJ ≤ +150°C

SD

Note 4. Pules Width ≤ 300µs, Duty Cycle ≤ 2%.

Electrical Characteristics: (TJ = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Drain–to–Source Breakdown Voltage V
Breakdown Voltage Temp. Coefficient ∆V

(BR)DSSVGS

(BR)DSS

∆T

Static Drain–to–Source On–Resistance R
Gate Threshold Voltage V

DS(on)
GS(th)

Forward Transconductance g
Drain–to–Source Leakage Current I

Gate–to–Source Forward Leakage I
Gate–to–Source Reverse Leakage I

DSS

GSS
GSS

Total Gate Charge Q
Gate–to–Source Charge Q
Gate–to–Drain (“Miller”) Charge Q
Turn–On Delay Time t

d(on)

Rise Time t
Turn–Off Delay Time t

d(off)

Fall Time t
Internal Drain Inductance L
Internal Source Inductance L
Input Capacitance C
Output Capacitance C
Reverse Transfer Capaticance C

fs

gs
gd

r

f
D
S

iss

oss

rss

= 0V, ID = 250µA 600 – – V

Reference to +25°C, ID = 1mA – 0.70 – V/°C

J

VGS = 10V, ID = 4.1A, Note 4 – – 1.2 Ω
VDS = VGS, ID = 250µA 2.0 – 4.0 V
VDS = 100V, ID = 4.1A, Note4 4.9 – – mhos
VDS = 600V, VGS = 0V – – 100 µA
VDS = 480V, VGS = 0V, TJ = +125°C – – 500 µA
VGS = 20V – – 100 nA
VGS = –20V – – –100 nA
ID = 6.2A, VDS = 360V, VGS = 10V,

g

Note 4

– – 60 nC
– – 8.3 nC
– – 30 nC

VDD = 300V, ID = 6.2A, RG = 9.1Ω,
RD = 47Ω, Note 4

– 13 – ns
– 18 – ns
– 55 – ns
– 20 – ns

Between lead, .250in. (6.0) m m from
package and center of die contact

VGS = 0V, VDS = 25V, f = 1MHz

– 5.0 – nH
– 13 – nH
– 1300 – pF
– 160 – pF
– 30 – pF

Source–Drain Ratings and Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

Continuous Source Current (Body Diode) I
Pulsed Source Current (Body Diode) I
Diode Forward Voltage V

S

SM

SD

Note 1 – – 27 A
TJ = +25°C, IS = 6.8A, VGS = 0V,

– – 6.8 A

– – 1.5 V

Note 4
Reverse Recovery Time t
Reverse Recovery Charge Q
Forward Turn–On Time t

TJ = +25°C, IF = 6.2A,

rr

di/dt = 100A/µs, Note 4

rr

Intrinsic turn–on time is neglegible (turn–on is dominated by LS+LD)

on

– 450 940 ns
– 3.8 7.9 µC

Note 1. Repetitive rating; pulse width limited by maximum junction temperature.
Note 4. Pulse width ≤ 300µs; duty cycle ≤ 2%.