NTE NTE283 Datasheet
NTE283
Silicon NPN Transistor
Horizontal Output, Switch
Description:
The NTE283 is a silicon NPN transistor in a TO3 type package designed for high–voltage, high–
speed, power switching in inductive circuits where fall time is critical. Typical applications include
switching regulators, PWM inverters, solenoid and relay drivers.
Absolute Maximum Ratings:
Collector–Emitter Voltage (IB = 0), V
Collector–Emitter Voltage (V
Emitter–Base Voltage, V
Collector Current, I
C
BE
EBO
CEO
= 0), V
CES
Continuous 10A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (t
Base Current, I
Total Power Dissipation (T
Operating Junction Temperature, T
Storage Temperature Range, T
≤ 10ms) 15A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
p
B
≤ +25°C), P
C
stg
tot
J
Thermal Resistance, Junction–to–Case, R
–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJC
325V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
800V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.75°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current I
Emitter Cutoff Current I
Collector–Base Voltage V
Collector–Emitter Sustaining Voltage V
Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V
DC Current Gain h
Current Gain–Bandwidth Product f
Second Breakdown Collector Current I
(TC = +25°C unless otherwise specified)
V
CES
EBO
CBOIC
CEO(su
s)
CE(sat)IC
BE(sat)IC
FE
T
S/b
= 800V, VBE = 0 – – 1 mA
CEV
VEB = 8V, IC = 0 – – 1 mA
= 1mA, IE = 0 800 – – V
IC = 100mA, IB = 0, Note 1 325 – – V
= 8A, IB = 2.5A, Note 1 – – 3.3 V
= 8A, IB = 2.5A, Note 1 – – 2.2 V
VCE = 10V, IC = 2.5A, Note 1 15 – –
VCE = 10V, IC = 500mA – 10 – MHz
VCE = 25V, Note 2 4 – – A
Note 1. Pulse test: Pulse Width = 300µs, Duty Cycle = 1.5%.
Note 2. Pulsed: 1sec, non–repetitive pulse.
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Turn–On Time t
Storage Time t
Fall Time t
Fall Time t
.135 (3.45) Max
.350 (8.89)
on
VCC = 250V, IC = 5A, IB1 = 1A – 0.2 – µs
VCC = 250V, IC = 5A,
s
IB1 = –IB2 = 1A
f
VCC = 40V, IC = 8A,
f
= –IB2 = 2.5A
I
B1
– 1.7 – µs
– 0.3 – µs
– – 1.0 µs
.875 (22.2)
Dia Max
Seating
Plane
.215 (5.45)
.430
(10.92)
Emitter
.040 (1.02).312 (7.93) Min
1.187 (30.16)
.665
(16.9)
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
.525 (13.35) R Max
Collector/CaseBase
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