NTE NTE280, NTE281 Datasheet

NTE280 (NPN) & NTE281 (PNP)

Silicon Complementary Trasistors

Audio Power Amplifier

Description:

The NTE280 (NPN) and NTE281 (PNP) are silicon complementary transistors in a TO3 type package
designed for use in high power, high fidelity audio frequency amplifier applications.

Features:

D High Power Dissipation: PC = 100W
D Collector–Emitter Breakdown Voltage: V

(BR)CEO

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Emitter Voltage, V

Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Emitter Current, I

C

E

Collector Power Dissipation (T
Operating Junction Temperature, T
Storage Temperature Range, T

CBO

EBO

CEO

= +25°C), P

C

J

stg

C

= 140V

140V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

140V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

12A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–12A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

100W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

Collector–Emitter Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Collector–Emitter Saturation Voltage V
Base–Emitter ON Voltage V
Current–Gain Bandwidth Product f
Output Capacitance C

(TA = +25°C unless otherwise specified)

(BR)CEOIC
(BR)EBOIE

CBO
EBO

FE

CE(sat)IC

BE(on)

T
cb

= 100mA, IB = 0 140 – – V

= 10mA, IC = 0 5 – – V
VCB = 60V, IE = 0 – – 100 µA
VEB = 5V, IC = 0 – – 100 µA
VCE = 5V, IC = 2A 40 – 140

= 7A, IB = 700mA – – 3.0 V
VCE = 5V, IC = 7A – – 2.5 V
VCE = 5V, IC = 2A – 5 – MHz
VCE = 10V, IE = 0, f = 1MHz – 220 – pF

Note 1. NTE280MP is a matched pair of NTE280 with their DC Current Gain (hFE) matched to within

10% of each other.

Note 2. NTE281MCP is a matched complementary pair containing 1 each of NTE280 (NPN) and

NTE281 (PNP).

.135 (3.45) Max

.350 (8.89)

.215 (5.45)

.430

(10.92)

Emitter

.875 (22.2)

Dia Max

Seating
Plane

.040 (1.02).312 (7.93) Min

1.187 (30.16)

.665

(16.9)

.156 (3.96) Dia
(2 Holes)

.188 (4.8) R Max

.525 (13.35) R Max

Collector/CaseBase