NTE NTE278 Datasheet

NTE278

Silicon NPN Transistor

Broadband RF Amp

Description:

The NTE278 is a silicon NPN transistor in a TO39 type package designed specifically for broadband
applications requiring good linearity. Usable as a high frequency current mode switch to 200mA.

Features:

D Low Noise Figure: NF = 3.0dB Typ @ f = 200MHz
D High Current–Gain Bandwidth Product: f

Absolute Maximum Ratings:

Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Continuous Base Current, I
Total Device Dissipation (T

CEO

CBO

EBO

C

B

= +75°C, Note 1), P

C

Derate Above 25°C 20mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Storage Temperature Range, T

stg

= 1200MHz Min @ IC = 50mA

T

D

20V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

40V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

3V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

400mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

400mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

2.5W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Note 1. Total Device Dissipation at T

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics

Collector–Emitter Sustaining Voltage V

Collector Cutoff Current I

Emitter Cutoff Current I

(TC = +25°C unless otherwise specified)

= +25°C is 1 Watt.

A

CEO(sus)IC

V

CER(sus)IC

CEO

I

CEX

EBO

= 5mA, IB = 0 20 – – V

= 5mA, RBE = 10Ω, Note 2 40 – – V
VCE = 15V, IB = 0 – – 20 µA
VCE = 15V, VBE = –1.5V, TC = +150°C – – 5 mA
VCE = 35V, VBE = –1.5V – – 5 mA
VBE = 3V, IC = 0 – – 100 µA

Note 2. Pulsed through a 25mH inductor; 50% Duty Cycle.

Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

ON Characteristics

DC Current Gain h

FE

IC = 360mA, VCE = 5V 5 – –
IC = 50mA, VCE = 15V 40 – 120

Dynamic Characteristics

Current–Gain Bandwidth Product f
Collector–Base Capacitance C

IC = 50mA, VCE = 15V, f = 200MHz 1200 – – MHz

T

VCB = 15V, IE = 0, f = 1MHz – 1.8 3.5 pF

cb

Noise Figure NF IC = 10mA, VCE = 15V, f = 200MHz – 3 – dB

Functional Test

Common–Emitter Amplifier Voltage

G

IC = 50mA, VCC = 15V, f = 50 to 216MHz 11 – – dB

ve

Gain

Power Input P

IC = 50mA, VCC = 15V, RS = 50Ω,

in

= 1.26mW, f = 200MHz

P

out

– – 0.1 mW

.370 (9.39) Dia Max

.355 (9.03) Dia Max

Emitter

.260
(6.6)
Max

.500

(12.7)

Min

.018 (0.45)

Base
Collector/Case

45°

.031 (.793)