NTE NTE275, NTE274 Datasheet

NTE274 (NPN) & NTE275 (PNP)

Silicon Complementary Transistors

Darlington Power Amplifier, Switch

Description:

The NTE274 (NPN) and NTE275 (PNP) are silicon complementary Darlington transistors in a TO66
type case designed for general purpose amplifier, low–frequency switching and hammer driver
applications.

Features:

D High DC Current Gain: hFE = 3000 Typ @ IC = 2A
D Low Collector–Emitter Saturation Voltage: V
D Collector–Emitter Sustaining Voltage: V

CE(sat)

CEO(sus)

D Monolithic Construction with Built–In Base–Emitter Shunt Resistors

Absolute Maximum Ratings:

Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I

C

CEO

CB

EB

Continuous 4A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak 8A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Base Current, I
Total Power Dissipation (T

B

= +25°C), P

C

D

Derate Above 25°C 0.286W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature Range, T
Storage Temperature Range, T

stg

Thermal Resistance, Junction–to–Case, R

J

thJC

= 2V Max @ IC = 2A

= 80V Min

80V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

80V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

80mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

50W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

3.5°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics

Collector–Emitter Sustaining Voltage V
Collector Cutoff Current I

Emitter Cutoff Current I

(TC = +25°C unless otherwise specified)

CEO(sus)IC

CEO

I

CER

EBO

VCE = 40V, IB = 0 – – 0.5 mA
VCE = 80V, V
VCB = 80V, V
VBE = 5V, IC = 0 – – 2.0 mA

= 50mA, IB = 0 80 – – V

= 1.5V – – 0.5 mA

EB(off)

= 1.5V, TA = +150°C – – 5.0 mA

EB(off)

Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

ON Characteristics

DC Current Gain h

FE

VCE = 3V, IC = 2A 750 – 18000
VCE = 3V, IC = 4A 100 – –

Collector–Emitter Saturation Voltage V

CE(sat)IC

= 2A, IB = 8mA – – 2.0 V

IC = 4A, IB = 40mA – – 3.0 V
Base–Emitter Saturation Voltage V
Base–Emitter ON Voltage V

BE(sat)IC

BE(on)

= 4A, IB = 40mA – – 4.0 V

VCE = 3V, IC = 2A – – 2.8 V

Dynamic Characteristics

Magnitude of Common Emitter

|hfe| IC = 1.5A, VCE = 3V, f = 1MHz 4.0 – –
Small–Signal Short–Circuit
Forward Current Transfer Ratio

Output Capacitance

NTE274

C

ob

VCB = 10V, IE = 0, f = 0.1MHz – – 120 pF

NTE275 – – 200 pF

Small–Signal Current Gain h

IC = 1.5A, VCE = 3V, f = 1kHz 300 – –

fe

NTE274

C

B

.062 (1.57)

.485 (12.3)

Dia

.295 (7.5)

E

NTE275

.031 (0.78) Dia

.960 (24.3) Base

.580 (14.7)

.147 (3.75) Dia
(2 Places)

C

.145 (3.7) R Max

.360 (9.14)

Min

.200

(5.08)

B

EmitterCollector/Case

E