NTE NTE270, NTE271 Datasheet
NTE270 (NPN) & NTE271 (PNP)
Silicon Complementary Transistors
Darlington Power Amp, Switch
Description:
The NTE270 (NPN) and NTE271 (PNP) are silicon Darlington complementary power transistors in
a TO218 t ype p ackage d esigned f or g eneral p urpose a mplifier a nd l ow f requency s witching a pplications.
Features:
D High DC Current Gain: hFE = 1000 Min @ IC = 5A, VCE = 4V
D Collector–Emitter Sustaining Voltage: V
CEO(sus)
D Monolithic Construction with Built–In Base–Emitter Shunt Resistor
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I
C
CEO
CB
EB
Continuous 10A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Note 1) 15A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Base Current, I
Total Device Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Thermal Resistance, Junction–to–Ambient, R
B
= +25°C), P
C
stg
D
J
thJC
thJA
= 100V Min @ 30mA
100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
500mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
125W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.0°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
35.7°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Pulse Width = 5ms, Duty Cycle ≤ 10%.
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector–Emitter Sustaining Voltage V
Collector Cutoff Current I
Emitter Cutoff Current I
(TC = +25°C unless otherwise specified)
CEO(sus)IC
CEO
I
CBO
EBO
= 30mA, IB = 0, Note 2 100 – – V
VCE = 50V, IB = 0 – – 2.0 mA
VCB = 100V, IE = 0 – – 1.0 mA
VBE = 5V – – 2.0 mA
Note 2. Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2%.
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
ON Characteristics (Note 2)
DC Current Gain h
FE
IC = 5A, VCE = 4V 1000 – –
IC = 10A, VCE = 4V 500 – –
Collector–Emitter Saturation Voltage V
CE(sat)IC
= 5A, IB = 10mA – – 2.0 V
IC = 10A, IB = 40mA – – 3.0 V
Base–Emitter Saturation Voltage V
BE(sat)IC
= 10A, IB = 40mA – – 3.5 V
Switching Characteristics (Resistive Load)
Delay Time t
Rise Time t
Storage Time t
Fall Time t
d
s
VCC = 30V, IC = 5A,
IB = 20mA, Duty Cycle ≤ 2%,
r
I = I , R & R Varied,
IB1 = IB2, RC & RB Varied,
T
= +25°C
J
f
Note 2. Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2%.
NTE270 NTE271
C
B
– 0.15 – µs
– 0.55 – µs
– 2.5 – µs
– 2.5 – µs
C
B
E
.600
(15.24)
C
.156
(3.96)
Dia.
BCE
.173 (4.4)
.550
(13.97)
.055 (1.4)
E
.060 (1.52)
.430
(10.92)
.500
(12.7)
Min
.015 (0.39)
.216 (5.45)
NOTE: Dotted line indicates that
case may have square corners
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