NTE NTE270, NTE271 Datasheet

NTE270 (NPN) & NTE271 (PNP)

Silicon Complementary Transistors

Darlington Power Amp, Switch

Description:

The NTE270 (NPN) and NTE271 (PNP) are silicon Darlington complementary power transistors in
a TO218 t ype p ackage d esigned f or g eneral p urpose a mplifier a nd l ow f requency s witching a pplications.

Features:

D High DC Current Gain: hFE = 1000 Min @ IC = 5A, VCE = 4V
D Collector–Emitter Sustaining Voltage: V

CEO(sus)

D Monolithic Construction with Built–In Base–Emitter Shunt Resistor

Absolute Maximum Ratings:

Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I

C

CEO

CB

EB

Continuous 10A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak (Note 1) 15A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Continuous Base Current, I
Total Device Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Thermal Resistance, Junction–to–Ambient, R

B

= +25°C), P

C

stg

D

J

thJC

thJA

= 100V Min @ 30mA

100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

500mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

125W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1.0°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

35.7°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Note 1. Pulse Width = 5ms, Duty Cycle ≤ 10%.

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics

Collector–Emitter Sustaining Voltage V
Collector Cutoff Current I

Emitter Cutoff Current I

(TC = +25°C unless otherwise specified)

CEO(sus)IC

CEO

I

CBO
EBO

= 30mA, IB = 0, Note 2 100 – – V
VCE = 50V, IB = 0 – – 2.0 mA
VCB = 100V, IE = 0 – – 1.0 mA
VBE = 5V – – 2.0 mA

Note 2. Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2%.

Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

ON Characteristics (Note 2)

DC Current Gain h

FE

IC = 5A, VCE = 4V 1000 – –
IC = 10A, VCE = 4V 500 – –

Collector–Emitter Saturation Voltage V

CE(sat)IC

= 5A, IB = 10mA – – 2.0 V
IC = 10A, IB = 40mA – – 3.0 V

Base–Emitter Saturation Voltage V

BE(sat)IC

= 10A, IB = 40mA – – 3.5 V

Switching Characteristics (Resistive Load)
Delay Time t
Rise Time t
Storage Time t
Fall Time t

d

s

VCC = 30V, IC = 5A,
IB = 20mA, Duty Cycle ≤ 2%,

r

I = I , R & R Varied,

IB1 = IB2, RC & RB Varied,
T

= +25°C

J

f

Note 2. Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2%.

NTE270 NTE271

C

B

– 0.15 – µs
– 0.55 – µs
– 2.5 – µs
– 2.5 – µs

C

B

E

.600

(15.24)

C

.156

(3.96)

Dia.

BCE

.173 (4.4)

.550

(13.97)

.055 (1.4)

E

.060 (1.52)

.430

(10.92)

.500

(12.7)

Min

.015 (0.39)

.216 (5.45)

NOTE: Dotted line indicates that
case may have square corners